Kinetically Controlled Condensation Boundary Governing Indium Incorporation in InGaN Metal Organic Vapor Phase Epitaxy

Le résumé fourni par la source

We combine in situ synchrotron X-ray crystal truncation rod measurements with a binary Burton-Cabrera-Frank model to quantify indium incorporation during InGaN growth by metal-organic vapor phase epitaxy (MOVPE) on GaN(0001). By distinguishing In adatoms from condensed droplets and incorporating coupled Ga-In incorporation kinetics, the model captures the intrinsically nonlinear dependence of indium composition on precursor flux and growth temperature. The critical In coverage corresponding to the maximum attainable In composition at a given temperature is determined by a kinetic balance between In adatom supply and incorporation capacity, defining a kinetically controlled condensation boundary that shifts with temperature and Ga flux. The model quantitatively predicts this boundary, in agreement with independent measurements, and provides a predictive framework for optimizing high-In-content InGaN growth while avoiding droplet formation.

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