Kinetically Controlled Condensation Boundary Governing Indium Incorporation in InGaN Metal Organic Vapor Phase Epitaxy
Qihui Lin, Junlin Wu, Erqi Xu, Jiaqing Yue et autres
We combine in situ synchrotron X-ray crystal truncation rod measurements with a binary Burton-Cabrera-Frank model to quantify indium incorporation during InGaN growth by metal-organic vapor phase epitaxy (MOVPE) on GaN(0001). By distinguishing In adatoms from condensed droplets and incorporating coupled Ga-In incorporation …
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arXiv (Cornell University)