Hiroshi Amano

Current-injection electroluminescence from Pr-related centers in an ion-implanted GaN diode structure

Shin Ito, Shin Sato, Michał Boćkowski, M. Deki et autres

We report room-temperature current-injection electroluminescence (EL) from praseodymium (Pr)-related centers in an ion-implanted gallium nitride (GaN) diode structure. Pr ions were introduced into GaN by ion implantation, and the samples were subsequently subjected to ultrahigh-pressure annealing (UHPA) and metal organic vapor phase …

jp, pl (code pays fourni par la source)

Polarity inversion and electronic structure in magnesium-induced GaN inversion domain superlattices

Li Jiang, Weifang Lu, Jia Wang, Xin Zhou et autres

Abstract In this study, we propose and investigate three atomic configurations of magnesium (Mg)-induced GaN inversion domain superlattices (denoted as IDBNa, IDBNb and IDBNc) using first-principles density functional theory. Detailed electronic structure analysis reveals that periodic polarity inversion at inversion domain boundaries …

cn, jp (code pays fourni par la source)

Enabling thin p-GaN Ohmic contacts through ultrathin magnesium deposition and brief thermal annealing

Haitao Wang, Shumeng Yan, Zhiyu Xu, Yingying Lin et autres

Gallium nitride (GaN) is a key semiconductor for optoelectronic and power electronic applications. However, achieving low-resistance Ohmic contacts to p-GaN remains challenging, particularly after plasma processing. Annealing of metallic magnesium (Mg) film on p-GaN has emerged as a promising approach, but severe …

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Micro‐LED/CMOS Integration Technologies for High‐Resolution AR Microdisplays: Scaling Limits, Yield, and Reliability

Tae Joon Park, Dong‐Sing Wuu, Ray‐Hua Horng, Hiroshi Amano et autres

ABSTRACT Micro‐LED microdisplays are emerging as a promising technology for high‐resolution augmented reality (AR) systems owing to their high luminance, energy efficiency, and operational stability. However, scaling to sub‐10 µm pixel pitch and megapixel resolution introduces tightly coupled challenges in electrical, thermal, …

kr, tw, jp (code pays fourni par la source)

P-Channel GaN FETs on Low-Doped Layers Enabled by Thermal Mg-Diffusion Process: Demonstration and Characterization

Manuel Fregolent, Biplab Sarkar, Shun Lu, Jia Wang et autres

This work reports on the development of GaN-based p-channel FETs on low-doped (~ 1017 cm-3) p-GaN layers by exploiting enhanced ohmic contacts obtained with a post-growth thermal Mg-diffusion process. Two architectures were tested, namely 1) MESFETs and 2)MOSFETs. The presence of improved …

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Controlling impurity concentration profiles in p–n and n–p junctions by halide vapor phase epitaxy with n/p-separated nozzles

Chihiro Nishiwaki, Naoki Fujimoto, Shugo Nitta, Takashi Murayama et autres

P–n and n–p junction structures with steep Mg concentration profiles were grown using a separated-nozzle halide vapor phase epitaxy (HVPE) reactor. In this reactor, n-type GaN and p-type GaN were grown at physically separated nozzles, enabling the independent control of impurity incorporation. …

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Kinetically Controlled Condensation Boundary Governing Indium Incorporation in InGaN Metal Organic Vapor Phase Epitaxy

Qihui Lin, Junlin Wu, Erqi Xu, Jiaqing Yue et autres

We combine in situ synchrotron X-ray crystal truncation rod measurements with a binary Burton-Cabrera-Frank model to quantify indium incorporation during InGaN growth by metal-organic vapor phase epitaxy (MOVPE) on GaN(0001). By distinguishing In adatoms from condensed droplets and incorporating coupled Ga-In incorporation …

Role of Mg hole traps in hole transport of p-GaN/UID-GaN/AlGaN/GaN heterostructure

Tanvir Hossain, A. K. M. Anindya Alam, Qingyun Xie, Hiroshi Amano et autres

This work reports on the dynamics of hole transport in a p-GaN/UID-GaN/AlGaN/GaN heterostructure investigated through temperature-dependent I–V characteristics. The pronounced temperature and bias dependence of the sheet resistance reveal that bulk p-GaN dominates hole transport at higher bias. Arrhenius analysis of the …

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Amblyseiini Muma 1961

Mohamed W. Negm, Shingo TOYOSHIMA, Hidenari Kishimoto, Hiroshi Amano

Tribe Amblyseiini Muma, 1961 Amblyseiini Muma, 1961: 273.

Égypte, jp (code pays fourni par la source)

Neoseiulus makuwa

Mohamed W. Negm, Shingo TOYOSHIMA, Hidenari Kishimoto, Hiroshi Amano

Neoseiulus makuwa (Ehara, 1972) Amblyseius (Amblyseius) makuwa Ehara, 1972: 154. Neoseiulus makuwa.— Negm et al., 2012b: 60. Amblyseius (Neoseiulus) makuwa.— Ehara & Amano, 1998: 37. Distribution: Hokkaido, Iwate, Fukushima, Ibaraki, Tochigi, Saitama, Chiba, Niigata, Shizuoka, Mie, Nara, Osaka, Kochi, Nagasaki, Miyazaki and …

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Iphiseius Berlese 1921

Mohamed W. Negm, Shingo TOYOSHIMA, Hidenari Kishimoto, Hiroshi Amano

Genus Iphiseius Berlese, 1921 Iphiseius Berlese, 1921: 95. Type species: Iphiseius degenerans (Berlese, 1889): 9.

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Amblyseius kokufuensis Ehara & Kato 1994

Mohamed W. Negm, Shingo TOYOSHIMA, Hidenari Kishimoto, Hiroshi Amano

Amblyseius kokufuensis Ehara & Kato, 1994 Amblyseius (Amblyseius) kokufuensis Ehara & Kato, 1994, in Ehara et al., 1994: 128. Amblyseius kokufuensis.— Demite et al., 2025. Distribution: Aomori, Iwate, Akita, Yamagata, Fukushima, Tochigi, Gunma, Niigata, Yamanashi, Nagano, Hyogo and Shimane. Plants: mulberry, Hydrangea …

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