Corrigendum: “Single-field-plate GaN HEMTs achieving >2400 V breakdown voltage and 106% dynamic on-resistance at 600 V stress” (2026 Jpn. J. Appl. Phys. 65 066501)
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Corrigendum: “Single-field-plate GaN HEMTs achieving >2400 V breakdown voltage and 106% dynamic on-resistance at 600 V stress” (2026 Jpn. J. Appl. Phys. 65 066501), Yang, Zhichao, Liao, Eason, Zhuang, Jungang, Dong, Hao, Zhang, Shuangshuang, Zhu, Lei, Yang, Zezheng, Zhang, Bingliang, Yu, Guohao, Zeng, Zhongming, Zhang, Baoshun
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GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor Quantum Structures and Devices