Single-field-plate GaN HEMTs achieving >2200 V breakdown voltage and 106% dynamic on-resistance at 600 V stress

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Abstract This work reports GaN power high-electron-mobility transistors (HEMTs) that achieve a breakdown voltage (BV) exceeding 2400 V (defined at I DSS <1 μA mm −1 ) through the implementation of a single gate field plate (FP). This design establishes a simplified yet optimized electric field profile, which is key to achieving a high BV while maintaining favorable dynamic performance. The dynamic ON-resistance ( R on ) remains as low as 106% after OFF-state V DS stress at 600 V. The combination of high BV and robust dynamic characteristics demonstrates that the single gate FP technique is a promising approach for the mass production of high-performance GaN power HEMTs, offering the potential for reduced process complexity and cost without compromising device performance.