Q. K. Xue

Biofouling Community Dynamics on Nylon and Polyethylene Aquaculture Nets in the North Yellow Sea: Colonization Patterns and Mytilus edulis Mechanical Properties

Shilin He, Q. K. Xue, Zhixuan Fu, Lei Bao et autres

A hanging net test was conducted from May to November 2022 on Takifugu rubripes culture nets at Wang Jia Island in the North Yellow Sea, China. The study identified 21 species of fouling organisms, with Mytilus edulis emerging as the dominant fouling …

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Design and Test of a Cavitation Water Jet Net Box Cleaning Device Based on Ansys Fluent

Yuke Xiong, Q. K. Xue, Kuo Li, Lei Bao et autres

This study addresses the issue of biofouling on marine aquaculture cages, where organisms like algae and purple mussels negatively impact both the safety of the aquaculture environment and the integrity of the cages. To solve this problem, the paper introduces a cage …

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Assessing the reinforced molecular/mechanical behaviors of GOs@Mo-MOFs films deposited via electrophoresis onto microdevices: Experimental and theoretical perspectives

Zhiyong Cao, Gong Chuang, Q. K. Xue, Hanshuo Wang et autres

One of the primary hurdles in microdevice fabrication lies in ascertaining the most impactful tactics for adapting metal surfaces. Through a one-pot tackle and distinct mechanochemical reactions evoked by 15 min aqueous wet sand-milling (SM-15), we successfully grafted Mo-based metal-organic frameworks (Mo-MOFs) …

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Influence of growth temperature on formation of continuous Ag thin film on ZnO surface by ultra-high vacuum deposition

Tianyao Zhang, Zengxia Mei, Yujing Guo, Q. K. Xue et autres

This recently published paper contains an incorrect image for figure 1( g ) on page 3 which should be replaced by the figure below. Other images in figure 1, as well as the caption and discussions about figure 1, are correct. Figure …

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In Ga As P ∕ In P buried-heterostructure laser diodes grown on InP using molecular beam epitaxy and metal-organic chemical vapor deposition

Gregory W. Pickrell, Huili Zhang, Hongwen Ren, D. Zhang et autres

Buried-heterostructure (BH) laser diodes were fabricated using both molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). MBE was used to grow the active region and the p-type cladding and contact structures while MOCVD was used for the Fe-doped, blocking layer …

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Surface and Interface Studies of GaN Epitaxy on Si(111) via ZrB2 Buffer Layers

Yukiko Yamada‐Takamura, Z. T. Wang, Yosuke Fujikawa, Takeshi Sakurai et autres

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were …

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Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl

S. Kuwano, Q. Z. Xue, Y. Asano, Yosuke Fujikawa et autres

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Layer-by-layer growth of Ag on a GaN(0001) surface

Kehui Wu, Q. Z. Xue, Rauf Z. Bakhtizin, Yosuke Fujikawa et autres

A drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski–Krastanov (SK) growth at low Ag flux (∼0.8 ML/min) to layer-by-layer growth at a high flux (∼60 ML/min), was observed. Based on this finding, an approach to obtain a …

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Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

Q. K. Xue, Q. Z. Xue, S. Kuwano, Takeshi Sakurai et autres

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Atomistic investigation of various GaN (0001) phases on the 6H−SiC (0001) surface

Qizhen Xue, Q. K. Xue, Rauf Z. Bakhtizin, Yukio Hasegawa et autres

A number of superstructures of the GaN (0001) surface have been investigated systematically by reflection high-energy electron diffraction, scanning tunneling microscopy, and first-principles theoretical calculations. The GaN-thin films are grown on the Si-terminated 6H-SiC (0001) surface by an N plasma-assisted molecular-beam epitaxy …

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Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film

Qizhen Xue, Q. K. Xue, Yukio Hasegawa, Ignatius S. T. Tsong et autres

A scratch-free and atomically flat 6H–SiC(0001) surface has been successfully prepared by a two-step method which combines atmospheric hydrogen treatment and ultrahigh vacuum Si etching. On this surface, a high-quality GaN(0001) thin film is obtained by radio frequency nitrogen plasma assisted molecular …

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Two-Dimensional Domain Boundary Segregation of C60 in Cu(111)4×4-C60/C70 Phase

Xianjie Wang, Tomihiro Hashizume, V. Yu. Yurov, Q. K. Xue et autres

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