Yoojoo Yun

Self‐Incandescent Heating‐Driven Microstructural Consolidation of Biscrolled Cu/CNT Yarns for Reduced Frequency‐Dependent AC Resistance

Feng Wang, Yoojoo Yun, Jung Hyun Ryu, Kyonghwa Song et autres

ABSTRACT Developing flexible conductors that combine high conductivity, stable MHz‐range electrical behavior, and mechanical durability remains a challenge. This is primarily because conventional bulk‐type metals suffer from frequency‐dependent AC‐resistance increases, while standard composites often exhibit poor interfacial integrity. Here, we address these …

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Effect of Self‐Incandescent Heating on Superconducting NbN Nanowire Yarn

Jeongmin Park, Jeong‐Gyun Kim, Sung Ju Hong, Yoojoo Yun et autres

Abstract A flexible superconducting yarn composed of twisted niobium nitride (NbN) nanofibrils is developed and exhibited a superconducting transition temperature that met the reported record of ≈17 K. NbN is sputter‐deposited onto a template of aligned single‐layer carbon nanotube (CNT) sheets and …

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Large–Area Graphene Electrode for Ferroelectric Control of Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystal

Gwanmu Lee, Moonyoung Jung, Yoojoo Yun, Hojin Kang et autres

Abstract Large‐area monolayer graphene is utilized as a metallic electrode for a ferroelectric single‐crystal [Pb(Mg1/3Nb2/3)O3]m–[PbTiO3]n (PMNPT). Unlike conventional metal, whose properties remain unaffected by field‐induced charge carriers, graphene's unique Dirac‐cone band structure causes its carrier density to vary in response to the …

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Gate‐Tunable Potential Barrier on Dual‐Gate Graphene Transistor with Fluorocarbon Thin Film

Yoonhyuck Yi, Yoojoo Yun, Eunmi Cho, Jinho Jeon et autres

Abstract This article reports on the charge transport characteristics across the potential barrier generated by a local dual‐gate modulation at the surface of p‐doped graphene via surface contact on a fluorocarbon (CF) thin film. Owing to simple physical contact, the strong electron …

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Study of a large-area graphene transistor on a CaF2 substrate using a full-coverage polymer film as an additional dielectric

Yoojoo Yun, Jin-Seok Oh, Yoonhyuck Yi, Hyun-Kyung Lee et autres

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Nanoscale Electrical Probes on a Single Facet of a ZnO Microwire: Device Fabrication and Local Electrical Characteristics

Yoojoo Yun, Dong Hoon Shin, Hakseong Kim, Jun Hee Choi et autres

The electrical properties of a single facet of an individual ZnO microwire were investigated. Electrode patterns with a Hall bar structure were deposited on the surface of the top facet of the ZnO microwire. Using a suspended and cross-linked poly(methyl methacrylate) ribbon …

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Highly elastic conductive sponges by joule heat-driven selective polymer reinforcement at reduced graphene oxide junctions

Fakhre Alam Khan, Agha Aamir Jan, Yoojoo Yun, Shrawan Roy et autres

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Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors

Hyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, Hojoon Yi et autres

The transport behaviors of MoS 2 field-effect transistors (FETs) with various channel thicknesses are studied. In a 12 nm thick MoS 2 FET, a typical switching behavior is observed with an I on / I off ratio of 10 6 . However, …

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Coulomb scattering mechanism transition in 2D layered MoTe 2 : effect of high- κ passivation and Schottky barrier height

Min‐Kyu Joo, Yoojoo Yun, Hyunjin Ji, Dongseok Suh

Abstract Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However, atomically thin 2D materials are sensitive to undesired Coulomb scatterers such as surface/interface adsorbates, metal-to-semiconductor Schottky barrier (SB), and ionic charges …

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Electrothermal Local Annealing via Graphite Joule Heating on Two-Dimensional Layered Transistors

Yoojoo Yun, Jeongmin Park, Hyun Kim, Jung Jun Bae et autres

A simple but powerful device platform for electrothermal local annealing (ELA) via graphite Joule heating on the surface of transition-metal dichalcogenide, is suggested here to sustainably restore intrinsic electrical properties of atomically thin layered materials. Such two-dimensional materials are easily deteriorated by …

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Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

Hyunjin Ji, Gwanmu Lee, Min‐Kyu Joo, Yoojoo Yun et autres

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5–15 nm, both the low-field carrier mobility …

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Strong Coulomb scattering effects in monolayer WS$_{\mathrm{2}}$ transistor analyzed by low-frequency noise measurement

Yoojoo Yun, Min‐Kyu Joo, Seokjoon Yun, Young Hee Lee et autres