Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors
Hyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, Hojoon Yi et autres
The transport behaviors of MoS 2 field-effect transistors (FETs) with various channel thicknesses are studied. In a 12 nm thick MoS 2 FET, a typical switching behavior is observed with an I on / I off ratio of 10 6 . However, …
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