2024
conference-paper
OpenAlex
Yen‐Ming Chen, T. Ko, K. C. Ting, Sandeep Goel et autres
This work introduces the next generation System-on-Integrated-Chips (SoIC) 3D stacking technology, which facilitates ultra-high bandwidth density die-to-die links between stacked dies with outstanding electrical, thermal, and reliability characteristics. The device performance remains stable throughout carefully managed manufacturing processes, as evidenced by the …
tw
(code pays fourni par la source)
2020
conference-paper
OpenAlex
T. Ko, H. P. Pu, H. J. Kuo, C. T. Wang et autres
Inter-chip interconnect pitch miniaturization has become an essential part to enhance die-die communication bandwidth (BW) performance in advanced packaging technology. Among different inter-chip interconnect approaches reported [1]-[9], a fan-out technology with RDL could be the simplest integration approach. RDL scaling capability has …
tw
(code pays fourni par la source)
2019
conference-paper
OpenAlex
Chuei-Tang Wang, Jeng-Shien Hsieh, Victor C. Y. Chang, Shih-Ya Huang et autres
Heterogeneous integration has attracted much attention for high performance computing (HPC) since artificial intelligence (AI) accelerators surged. The technologies for heterogeneous integration, such as silicon interposer (2.5D), fan-out wafer-level-packaging (FOWLP), and organic substrate, have been proposed to integrate logic-logic or logic-HBM chips …
tw
(code pays fourni par la source)
2015
article
OpenAlex
Seung-Do Lee, T. Ko, Myeong-Geon Shin
본 연구의 목적은 초등학생 태권도 참여동기가 학업성취스트레스에 미치는 영향을 검증하여 중요성을 인식시켜 올바른 태권도활동을 할 수 있도록 제시하는데 주된 목적이 있다. 이러한 연구 목적을 달성하기 위하여 2015년 3월에 전라북도에 소재한 초등학교 학생들을 대상으로 편의표본추출법(Convenience Sampling Method)을 활용하여 총 250명의 표본을 추출, 이중 …
2013
article
OpenAlex
Cindy Goldberg, S. H. Park, B. Y. Kim, S. B. Law et autres
In this paper, we present a 64nm pitch integration and materials strategy to enable aggressive groundrules and extendibility for multi-node insertions. Exploitation of brightfield entitlements at trench and via lithography enables tight via and bi-directional trench pitch. Setting the same mask metal …
us
(code pays fourni par la source)
2010
conference-paper
OpenAlex
F. Chen, M. Shinosky, B. Li, C. Christiansen et autres
as the current-carrying capability of a copper line is reduced due to interconnect dimension shrinkage, self-aligned CoWP metal-cap has been reported to be helpful to improve degraded electromigration (EM) reliability. However, adoption of the metal cap in general further exacerbates the already …
us, sg
(code pays fourni par la source)
2006
conference-paper
OpenAlex
S. Sankaran, S. Arai, R. Augur, Mattias Beck et autres
A high performance 45nm BEOL technology with proven reliability is presented. This BEOL has a hierarchical architecture with up to 10 wiring levels with 5 in PECVD SiCOH (k=3.0), and 3 in a newly-developed advanced PECVD ultralow-k (ULK) porous SiCOH (k=2.4). Led …
us, ca, gb, kr
(code pays fourni par la source)
2006
conference-paper
OpenAlex
M.-S. Yhe, Hsien-Wien Chang, Chun-Hsing Shih, C.J. Lin et autres
Effect of Cu capping layer processes on stress-migration (SM) is discussed in this paper. Cu cap was demonstrated to reduce the failure rates of SM, presumably owing to its suppression of vacancy surface migration under stress gradient. Although formation of CuSix improved …
tw
(code pays fourni par la source)
2005
conference-paper
OpenAlex
Chun-Hsing Shih, S.W. Chou, C.J. Lin, T. Ko et autres
In this work, the design criteria of ECP additives on Cu BEOL reliability are revealed. By varying the ECP additive structures and concentrations, we demonstrate how gap filling performance and impurity level of the bulk copper can influence the electromigration lifetime and …
tw
(code pays fourni par la source)
2005
conference-paper
OpenAlex
Chun-Hsing Shih, H.W. Su, C.J. Lin, T. Ko et autres
Direct electro-deposition of a highly conformal and adherent Cu seed on ALD TaN by means of electro-grafting technique is presented. Both the adhesion of Cu seed to the underlying ALD TaN and EM lifetime performance were greatly enhanced by electro-grafting process, while …
tw
(code pays fourni par la source)
2004
conference-paper
OpenAlex
T. Ko, Chih-Sheng Chang, S.W. Chou, M.W. Lin et autres
In this work, a selective CoWP metal cap was employed after Cu CMP process for replacing conventional dielectric cap layer platform. A 5% reduction in RC delay was demonstrated for this new approach. The CoWP cap layer improves the interface between Cu …
tw
(code pays fourni par la source)
2003
article
OpenAlex
W.-X. Yu, Bing‐Hung Chen, T. Ko
This work studies the chemical composition at the interface generated through the electroless deposition of a copper layer onto a polyimide (PI) slice. Upilex-S®-50 [poly(biphenyl dianhydride-p-phenylenediamine)] (BPDA-PDA) polyimide film was selected as the substrate, on which wet chemstry modifications were carried out …
sg, tw, us
(code pays fourni par la source)