Hyungju Noh

Mechanical stability analysis of 3D nanosheet-stacked structure

Taegun Kim, Hyungju Noh, Jae Yeon Park, Seungwon Go et autres

Abstract The three-dimensionally (3D) stacked gate-all-around (GAA) nanosheet (NS) channel structures have been adopted into the state-of-the-art integrated circuit technologies to overcome the scaling limit of conventional device structure. However, a mechanical stress during the channel release process, which results in the …

kr (code pays fourni par la source)

Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash

Yelim Jeon, Hyungju Noh, Seungwon Go, Sangwan Kim

In this paper, the operation mechanism of gate-injection ferroelectric flash (GI-FeFlash) is studied through technology computer-aided design (TCAD) simulations. It reveals that GI-FeFlash exhibits an extraordinarily large memory window (MW) compared to the sum of MWs of a ferroelectric field-effect transistor (FeFET) …

kr (code pays fourni par la source)

Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi2/n+ Si

Hyungju Noh, Changmin Chae, Yelim Jeon, Dongseok Oh et autres

This study investigates the impact of cross-bridge Kelvin resistor (CBKR) layout designs on specific contact resistivity (ρc) measurements between TiSi2 and n+ Si. The theoretical ρc is calculated as a function of silicon doping concentration (NSi) and Schottky barrier height (ϕb) to …

kr (code pays fourni par la source)

Rigorous Analysis on the Operating Mechanism of Gate-Injection Ferroelectric Flash

Hyungju Noh, Yelim Jeon, Seungwon Go, Sangwan Kim

Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device

Seungwon Go, Sunwoo Lee, Hyungju Noh, Seonggeun Kim et autres

In this paper, a ferroelectric tunnel field-effect transistor (FeTFET) is demonstrated as a synapse device. The experimental results clearly show that there are several merits in FeTFET as a synapse device comparing with the FeFET. First, the FeTFET shows the ∼3 orders …

kr (code pays fourni par la source)

Analysis of Transient Response of Negative Capacitance Field-Effect Transistor

Dong Keun Lee, Seungwon Go, Jae Yeon Park, Hyungju Noh et autres

This study investigates the impact of ferroelectric polarization switching delay on the transient characteristics of negative capacitance field-effect transistors (NCFETs) and their corresponding logic circuit performance by using technology computer-aided design (TCAD) simulation. As the ferroelectric switching delay increases, the polarization fails …

kr (code pays fourni par la source)

Impact of Zr Precursor on Electrical Characteristics of HfZrO Laminated Structure

Seungwon Go, Hyungju Noh, Seonggeun Kim, Jae Yeon Park et autres

In this study, the effects of Zr precursor [i.e., tetrakis(ethylmethylamino) Zr (TEMA-Zr) and cyclopentadi- enyl tris(dimethylamino) Zr (Cp-Zr)] on the laminated HfZrO (HZO) are investigated for the enhanced ferroelectric characteristics. The laminated HZO film with the Cp-Zr shows superior ferroelectricity (i.e., remnant …

kr (code pays fourni par la source)

Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

Jingyu Park, Seungwon Go, Woojun Chae, Chang Il Ryoo et autres

Abstract In this paper, the floating body effect (FBE) in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) and the mechanism of device failure caused by that are reported for the first time. If the toggle AC pulses are applied to the gate and drain …

kr (code pays fourni par la source)

Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation

Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyungju Noh et autres

kr, us (code pays fourni par la source)

Experimental Examination of Piping System Leak Localization via a Non-intrusive Band Sensor System through Cross Correlation Function

Byung-Chang Jung, Hyungju Noh, Jin-woo Park, Sunah Jung et autres

산업 현장에서 배관 손상 발생 시 신속하게 손상 위치를 탐지하거나 파악할 수 있는 기술의 개발은 배관 파손에 따른 사고의 확산 및 이에 따른 인적, 물적 손실을 감소시키기 위해 매우 중요하다. 배관의 손상은 그 크기에 따라 파열(rupture)과 누설(leakage)로 구분할 수 있으며, 다양한 방식으로 …