Dongxia Shi

Efficient, Non‐Destructive Transfer of Wafer‐Scale Monolayer MoS 2 by Interface Engineering (Adv. Funct. Mater. 12/2026)

Zheng Wei, Yongqing Cai, Jieying Liu, Liyan Zhang et autres

Interface Engineering This cover image illustrates efficient, non-destructive transfer of wafer-scale monolayer MoS2 through interface engineering. The visual highlights MoS2 on the surface with a magnifying crystal structure, a PDMS interface, and a sapphire substrate. Lifted films reveal weak substrate bonding, offering …

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Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors

Songge Zhang, Tao Zhang, Hua Yu, Tong Li et autres

High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we …

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Efficient, Non‐Destructive Transfer of Wafer‐Scale Monolayer MoS 2 by Interface Engineering

Wei Zheng, Yongqing Cai, Jieying Liu, Liyan Zhang et autres

Abstract 2D layered materials with atomic thicknesses and dangling‐bond‐free flat surfaces hold great potential to overcome the fundamental challenges of current silicon technology, and to develop completely new device architectures and functionalities. Although notable progress in the synthesis of wafer‐scale 2D materials …

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Realization of 2D metals at the ångström thickness limit

Jiaojiao Zhao, Li Lü, Peixuan Li, Liyan Dai et autres

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Author Correction: Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene

Le Liu, Shihao Zhang, Yanbang Chu, Cheng Shen et autres

In the version of the article initially published, the National Natural Science Foundation of China grant no. 12074413 was written incorrectly and has now been amended in the HTML and PDF versions of the article.

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Medium-scale flexible integrated circuits based on 2D semiconductors

Yalin Peng, Chenyang Cui, Lu Li, Yuchen Wang et autres

Two-dimensional (2D) semiconductors, combining remarkable electrical properties and mechanical flexibility, offer fascinating opportunities for flexible integrated circuits (ICs). Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration …

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Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2

Xiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi et autres

Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate …

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Homo‐Site Nucleation Growth of Twisted Bilayer MoS 2 with Commensurate Angles

Jun Zhou, Haojie Huang, Zihan Zhao, Zhenglong Dou et autres

Abstract Moiré superlattices, composed of two layers of transition metal dichalcogenides with a relative twist angle, provide a novel platform for exploring the correlated electronic phases and excitonic physics. Here, a gas‐flow perturbation chemical vapor deposition (CVD) approach is demonstrated to directly …

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Sliding ferroelectric memories and synapses

Xiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi et autres

Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically …

Giant Correlated Gap and Possible Room-Temperature Correlated States in Twisted Bilayer MoS2

Fanfan Wu, Qiaoling Xu, Qinqin Wang, Yanbang Chu et autres

Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report evidence of possible room-temperature correlated …

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Low power flexible monolayer MoS2 integrated circuits

Jian Tang, Qinqin Wang, Jinpeng Tian, Xiaomei Li et autres

Abstract Monolayer molybdenum disulfide (ML-MoS 2 ) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS 2 ICs are low power consumption and high performance. However, these are …

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Epitaxial growth of trilayer graphene moiré superlattice

Yalong Yuan, Yanbang Chu, Cheng Hu, Jinpeng Tian et autres

The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene (TLG) moiré superlattice on hexagonal …

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