Fei Liu

Ultra-Scaled and Ultrafast Two-Dimensional Sliding Ferroelectric Memory: From High-Throughput Discovery to Atomic-Scale Kinetics

G. Q. Yao, Ligong Zhang, Bing Huang, Fei Liu

High-density and fast-speed memory are greatly demanded for information storage and processing in the artificial intelligence era. Two-dimensional (2D) sliding-ferroelectrics (FEs) offer a transformative path for these applications, yet research has remained limited to a few materials. In this work, we report …

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A Pfaffian Proof and Generalization of a Conjecture of Sun Zhiwei

Hong-Ge Chen, Fei Liu

Let $p$ be an odd prime, let $n=(p-1)/2$, and let $χ=(\frac{\cdot}{p})$, with $χ(0)=0$. For $a\in\mathbb F_p^\times$ define \[ D_a(x)=\det_{1\le i,j\le n}(x+χ(i^2-aj)), \qquad D_a^{(0)}(x)=\det_{0\le i,j\le n}(x+χ(i^2-aj)). \] We prove \[ D_a(0)=0 \quad\Longleftrightarrow\quad p\equiv 3 \pmod 4 \quad\text{and}\quad χ(a n!)=1. \] For $p\equiv3\pmod4$ we …

A Pfaffian Proof and Generalization of a Conjecture of Sun Zhiwei

Hong-Ge Chen, Fei Liu

Let $p$ be an odd prime, let $n=(p-1)/2$, and let $χ=(\frac{\cdot}{p})$, with $χ(0)=0$. For $a\in\mathbb F_p^\times$ define \[ D_a(x)=\det_{1\le i,j\le n}(x+χ(i^2-aj)), \qquad D_a^{(0)}(x)=\det_{0\le i,j\le n}(x+χ(i^2-aj)). \] We prove \[ D_a(0)=0 \quad\Longleftrightarrow\quad p\equiv 3 \pmod 4 \quad\text{and}\quad χ(a n!)=1. \] For $p\equiv3\pmod4$ we …

Biomimetic ferroelectric-semiconductor transistor enables neuronal multisensory integration

Liu S, Li Zhang, Ruiqing Xie, Zhiyuan Wu et autres

Human brain seamlessly integrates multisensory stimuli to synthesize complementary information for enhanced perceptions, depending on neural principles of superadditivity, inverse effectiveness, and temporal congruency. Replicating multisensory integration in artificial intelligences has remained challenging due to the inefficiency of algorithmic fusions and the …

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Molecular Dynamics Study on Deep Learning Potential of the (LiF-YF 3 ) eut. -Y 2 O 3 Molten Salt System

Xu Wang, Fei Liu, Kailei Sun

In this study, a machine learning workflow via the Deep Potential Generator (DPGEN) was then used to train a molecular dynamics potential function for the (LiF-YF 3 ) eut. -Y 2 O 3 molten salt system. Radial distribution functions (RDFs) and angular …

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Hash-matching-based local density matrix reuse method for efficient ab initio electronic structure construction in large-scale complex systems

Zili Tang, Xiaoxin Xie, Xiaoyan Liu, Xing Zhang et autres

First-principles electronic structure calculations for large-scale material systems with defects or dopants remain a major computational bottleneck in atomistic simulations. Here, we propose a target-driven, non-learning-based method termed HaMLR (Hash-Matching-based Local density-matrix Reuse) to efficiently construct the density matrix of periodic atomic …

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van Hove Source for Ultralow Power Field-Effect Transistors

Baizhe He, Hang Zhou, Zebin Liu, Xiaobing Ma et autres

Field-effect transistors (FETs) with sub-60 mV/decade subthreshold swing (SS) at room temperature are highly sought after for enabling next-generation ultralow-power integrated circuits (ICs). We present a van Hove source (VHS) FET that exploits the steeply declining density of states (DOS) at the …

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Machine Learning‐Driven Molecular Dynamics Study of LiF ‐ SmF3 Molten Salts

Fei Liu, Kailei Sun, Xu Wang

ABSTRACT LiF‐SmF3 systems are the basic medium for the electrolytic preparation of Sm‐Fe alloys by molten salt electrolysis. An in‐depth analysis of its properties and local structural features is of great theoretical and practical significance for optimizing the electrolytic preparation process of …

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Realizing Boltzmann Switching Limit in Carbon Nanotube Transistors through Combating Intertube Electrostatic Coupling

Junhao Lv, Hang Zhou, Fei Liu, Lian‐Mao Peng et autres

High-density aligned carbon nanotubes (A-CNTs), with ultrahigh carrier mobility and atomically thin bodies, hold great promise for next-generation field-effect transistors (FETs), offering significant potential for high speed and energy efficiency. These unique properties position A-CNTs as a leading candidate for future very-large-scale …

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Steep Subthreshold Slope Transistors for Low-Power Electronics: Evolution, Challenges, and Perspectives

Rundong Jia, Chunlei Wu, Fei Liu, Qianqian Huang

In the past few decades, the development of ICs has followed Moore’s law, and chip performance has been continuously improved based on device scaling and increased integration. However, as the device size approaches the physical limit, power tends to reach an unacceptable …

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The graphene intercalation in realizing giant tunneling electroresistance in HfO2 ferroelectric tunnel junctions

Xiaoyan Liu, Fei Liu

Hafnia-based ferroelectric tunnel junctions (FTJs) have recently aroused significant interest due to their compatibility with complementary metal-oxide-semiconductor processes, as well as their potential applications in non-volatile memory and neuromorphic computing. However, the application of HfO2 FTJs is limited by its low tunnel …

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Design of Mott Multiferroic HfO2 by Inducing Unpaired d States

G. Q. Yao, Ming Yu, Xiaoyan Liu, Jinfeng Kang et autres

Single-phase multiferroics are rare due to the incompatibility of the empty d orbitals for ferroelectricity and partially filled d orbitals for magnetism. This study proposes a route to achieve Mott multiferroicity in HfO 2 via Nb and Ta doping, which induces an …

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