Yang Zhang

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect

Justin Rudie, Huong Tran, Yang Zhang, Sylvester Amoah et autres

SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have garnered significant attention. Among these, heterostructures incorporating quantum wells are particularly promising due to their enhanced carrier confinement. In such structures, the type of band alignment and the associated barrier …

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Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect

Justin Rudie, Huong Tran, Yang Zhang, Sylvester Amoah et autres

SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum wells are widely utilized. In these structures, band alignment type and barrier height are crucial for carrier confinement, making them highly desirable information …

Spatiotemporal Mode-Locked Multimode Soliton Fiber Laser Based on a Spatial Alignment Structure

Zihao Zhang, Yang Zhang, Xinghao Duan, Yi Zhang et autres

The spatiotemporal mode-locking (STML) offers a viable solution to address the energy limit of the single-mode conventional soliton (SM-CS). While the potential for generating highly multimode conventional soliton lasers has been predicted, experimental demonstrations are still lacking. Moreover, existing STML systems have …

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High-energy Spatiotemporal Self-Mode-locked Fiber Laser

Zihao Zhang, Yang Zhang, Xinghao Duan, Yi Zhang et autres

We demonstrate an all-fiber spatiotemporal self-mode-locked fiber laser with 4.23 nJ high pulse energy and 74 mW low mode-locked threshold. The soliton pulse is obtained with multimode beam profiles and clear Kelly sidebands.

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Spectral-attention transformer for single-pixel multispectral reconstruction

Xu Zhou, Xinyu Liu, Chang Wang, Yang Zhang et autres

Compared with array detectors (such as CCD or CMOS), single pixel detectors have potential in invisible band and weak light applications to broaden the spectrum of spectral imaging. Existing leading methods for spectral reconstruction (SR) focus on designing deeper or wider convolutional …

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Comprehensive investigation on improvement of local CDU for sub-20nm DRAM devices

Zhong Zhang, Yang Zhang, Liang Zhu, Yi Cheng et autres

Improving local critical dimension uniformity (LCDU) is always significant for enlarging process windows and reducing defect rates in lithography, especially for more scaling sub-20nm nodes in DRAM devices. In this study, various strategies are evaluated to improve both ADI and AEI LCDU …

Mechanisms for Catalytic CO Oxidation on SiAun (n = 1–5) Cluster

Yang Zhang, Dasen Ren

Significant progress has been made in understanding the reactivity and catalytic activity of gas-phase and loaded gold clusters for CO oxidation. However, little research has focused on mixed silicon/gold clusters (SiAun) for CO oxidation. In the present work, we performed density function …

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Tuning diamond electronic properties for functional device applications

Anliang Lu, Limin Yang, Chaoqun Dang, Heyi Wang et autres

Because of its ultrahigh hardness, synthetic diamond has been widely used in advanced manufacturing and mechanical engineering. As an ultra-wide bandgap semiconductor, on the other hand, diamond recently shows a great potential in electronics industry due to its outstanding physical properties. However, …

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Label-free neural networks-based inverse lithography technology

Jingtao Chen, Yuanyuan Zhao, Yang Zhang, Jianxin Zhu et autres

Neural network-based inverse lithography technology (NNILT) has been used to improve the computational efficiency of large-scale mask optimization for advanced photolithography. NNILT is now mostly based on labels, and its performance is affected by the quality of labels. It is difficult for …

Epoxy oxidized diamond (111)-(2 × 1) surface for nitrogen-vacancy based quantum sensors

Wei Shen, Shengnan Shen, Sheng Liu, Hui Li et autres

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Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation

Xian Guo Hu, Yang Zhang, Dorel Guzun, Morgan E. Ware et autres

Self-assembled quantum dots grown by molecular beam epitaxy have been a hotbed for various fundamental research and device applications over the past decades. Among them, InAs/GaAs quantum dots have shown great potential for applications in quantum information, quantum computing, infrared photodetection, etc. …

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Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy

Cheng-Ying Tsai, Yang Zhang, Zheng Ju, Yong‐Hang Zhang

It is known that the vertical hole mobility in superlattice structures, such as InAs/InAs1−xSbx type-II superlattices, is low and limits their photodetector performance. This paper reports the determination of vertical hole mobility in these superlattices with bandgaps in the mid-wave infrared range …

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