Two-dimensional growth of high-quality strontium titanate thin films on Si
H. Li, Xiaoming Hu, Yi Wei, Zhiyi Yu et autres
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0 citations
WORLD SCIENTIFIC eBooks
X. Zhang
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7Publications signalées
447Citations signalées
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Semiconductor materials and devicesElectronic and Structural Properties of OxidesFerroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesNatural Language Processing Techniques
Les publications récentes
Continual Learning on CLIP via Incremental Prompt Tuning with Intrinsic Textual Anchors
Haodong Lu, X. Zhang, Lina Yao, Anton van den Hengel et autres
Continual learning (CL) enables deep networks to acquire new knowledge while avoiding catastrophic forgetting. The powerful generalization ability of pre-trained models (PTMs), such as the Contrastive Language-Image Pre-training (CLIP) model, has inspired a range of CL methods targeting new and specialized tasks, …
0 citations
arXiv (Cornell University)
GTS allocation scheme revisited
Liang Cheng, X. Zhang, Anu G. Bourgeois
In IEEE 802.15.4, the bandwidth under-utilisation problem occurs in the guaranteed time slot (GTS) when the used bandwidth is less than the available bandwidth. A new GTS scheme is presented to allow more devices to share the bandwidth within the same period. …
us (code pays fourni par la source)
30 citations
Electronics Letters
Atomic and electronic structure of the Si/SrTiO3 interface
X. Zhang, Alexander A. Demkov, Hao Li, Xiaoming Hu et autres
We predict theoretically the wetting conditions for the layer-by-layer growth of thin ${\mathrm{SrTiO}}_{3}$ (STO) films on Si. The result is in agreement with our recent experiments. The state of the art band offset calculations identify two different possibilities for the band alignment …
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138 citations
Physical review. B, Condensed matter
Two-dimensional growth of high-quality strontium titanate thin films on Si
H. Li, Xiaoming Hu, Yi Wei, Zhiyi Yu et autres
Most semiconductor materials such as Si, Ge, and GaAs are subject to oxidation when exposed to oxidants. This results in difficulties in the heterointegration of epitaxial oxides on these semiconductors. Even though certain oxides may be thermodynamically stable when placed in contact …
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160 citations
Journal of Applied Physics
The interface of epitaxial SrTiO3 on silicon: in situ and ex situ studies
Xiaoming Hu, Hua Li, Yong Li Liang, Yungeng Wei et autres
The formation of interfacial layers between silicon and the overgrown epitaxial SrTiO3 as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. Models for the chemical compositions and atomic bonding states …
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100 citations
Applied Physics Letters
Ultraviolet-Raman studies of SrTiO3 ultrathin films on Si
L. Hilt Tisinger, R. Liu, J. Kulik, X. Zhang et autres
Stoichiometric and nonstoichiometric SrTiO3 (STO) films less than 50 nm were grown by molecular beam epitaxy on Si substrates for characterization with UV-Raman spectroscopy. All the films grown have first order phonon Raman scattering as the crystal symmetry has been altered due …
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19 citations
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
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