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Electron bombardment of ZnSe at 80\ifmmode^\circ\else\textdegree\fi{}K results in the production of two fluorescence bands at 5460 and 5850 \AA{}. The threshold for damage at 80\ifmmode^\circ\else\textdegree\fi{}K is 240 keV. When the sample is cooled to 4.2\ifmmode^\circ\else\textdegree\fi{}K following bombardment at 80\ifmmode^\circ\else\textdegree\fi{}K the fluorescence spectrum …
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A threshold for radiation damage in ZnSe has been previously reported at 240 keV under electron bombardment. Fluorescence bands at 5460 and 5850 A are produced. The damage causing these fluorescence bands anneals completely in a single stage at about 130K. At …
B. A. Kulp, R. M. Detweiler, Wilfried Anders
The temperature dependence of the two series of edge emission lines in single-crystal CdS has been studied in the range of 4.2 to 350\ifmmode^\circ\else\textdegree\fi{}K. The "blue" or short-wavelength lines persist to 350\ifmmode^\circ\else\textdegree\fi{}K, and at least three bands are directly associated with the …
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A threshold for the displacement of an atom from the ZnSe lattice by electron bombardment has been observed at 240 keV. An electron of 240 keV transfers a maximum energy of 8.2 eV to the selenium atom and 10 eV to the …
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