ELECTRON RADIATION DAMAGE IN ZNSE AT LOW TEMPERATURE

Le résumé fourni par la source

A threshold for radiation damage in ZnSe has been previously reported at 240 keV under electron bombardment. Fluorescence bands at 5460 and 5850 A are produced. The damage causing these fluorescence bands anneals completely in a single stage at about 130K. At 10K somewhat different fluorescence bands are produced. Following heat treatment aboove 90K the fluorescence spectrum produced by the 10K bombardment anneals into that produced by the 80K bombardment. This indicates that at least one and possibly more of the fluorescence centers observed following bombardment at 80K is a 'complex' center. That is, it is composed of a defect of Zn or Se in association with a foreign impurity. A second threshold for radiation damage in ZnSe has been observed while bombarding at 10K. This threshold is at 190 keV and is believed to be that for displacement of the Zn atom from the lattice. The 240 keV threshold is therefore associated with displacement of the selenium atom. The displacement energies are 7.6 eV for the zinc and 8.2 eV for the selenium atom. These values are compared to 7.3 eV and 8.7 eV for the cadmium atom and sulfur atom previously measured in CdS. (Author)

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