Gavin M. Latham

hν-MacEtch of Al-rich AlGaN: Enabling plasma-free processing in the ultra-wide-bandgap regime

Xihang Wu, Yue Wang, Gavin M. Latham, Aadil Waseem et autres

Al-rich AlGaN is essential for ultra-wide-bandgap (UWBG) electronics and deep-ultraviolet optoelectronics, yet its processing is limited by the lack of damage-free etching methods. Plasma-based approaches introduce defects, while anisotropic wet etching for GaN often fails at high Al content due to the …

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Deterministic Growth Mechanics of Spin Defects in Gallium Nitride Using MOCVD

Henry C. Roberts, Moriah Weiss, Gavin M. Latham, Andrew Perez et autres

We investigate the role of growth parameters in the generation of spin defects in GaN films using metalorganic chemical vapor deposition. Based on this, we attribute the emission to carbon-related complexes and achieve controllable generation.

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High-Temperature Photoluminescence Study of MOCVD-Grown β-Ga 2 O 3 : Effects of Doping and Crystallinity

Zhongjie Ren, Sangbin Park, Chih‐Yang Huang, Gavin M. Latham et autres

β-Ga 2 O 3 is a promising ultrawide-bandgap semiconductor for high-power electronics due to its large bandgap (∼4.9 eV), high breakdown field, and substrate availability. However, performance degradation at elevated temperatures remains a major hurdle. In this work, we present a comprehensive …

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Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor

Aadil Waseem, Gavin M. Latham, C. McAleese, Salwan Omar et autres

β-Ga2O3 is a highly promising ultrawide bandgap semiconductor material that is poised to transform the high-power electronics field. The manufacturability of device quality β-Ga2O3 epitaxial films at scale is urgently needed. Using a production-ready closed-coupled showerhead MOCVD reactor with in situ reflectance …

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21.4 GHz Surface Acoustic Wave Resonator with 11,400 m/s Phase Velocity in Thin-Film Lithium Niobate on Silicon Carbide

Joshua Campbell, Ian Muir Anderson, Tzu-Hsuan Hsu, Omar A. Barrera et autres

This paper reports a surface acoustic wave (SAW) resonator at 21.4 GHz with a high phase velocity of 11.4 km/s, a feasible direction for SAW devices to continue down. Transferred 100 nm 128Y lithium niobate (LN) thin film on 4H silicon carbide …

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FCPSOn Phase One Evaluation: Year Three.

Jennifer Morrison, K. L. Risman, Steven M. Ross, Gavin M. Latham et autres

English Language and Literacy Acquisition-Validation (ELLA-V) i3 Evaluation (Valid 22). Final Report.

Rebecca Red Wolf, Gavin M. Latham, Clayton Armstrong, Steven M. Ross et autres

English Language and Literacy Acquisition-Validation (ELLA-V) i3 Evaluation (Valid 22). Final Report.

Betsy Wolf, Gavin M. Latham, Clayton Armstrong, Steven M. Ross et autres

Evaluation of Around the Corner.

Betsy Wolf, Gavin M. Latham, Mary Laurenzano, Steven M. Ross et autres