Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor
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Le résumé fourni par la source
β-Ga2O3 is a highly promising ultrawide bandgap semiconductor material that is poised to transform the high-power electronics field. The manufacturability of device quality β-Ga2O3 epitaxial films at scale is urgently needed. Using a production-ready closed-coupled showerhead MOCVD reactor with in situ reflectance monitoring, this study presents a detailed investigation of the impact of growth parameters on the epitaxial growth of β-Ga2O3 on both (010) and (001) oriented native substrates, as well as on c-plane sapphire substrates with 0°–8° off-axis orientations. By tuning the showerhead–susceptor gap and mapping the other growth parameters, including annealing, nucleation, growth temperature, reactor pressure, and substrate orientation, we achieved state-of-the-art crystal quality, extraordinary wafer-level thickness uniformity of <1% variation for both 2-in. and 4-in. substrates for growth rates as high as 7.2 μm/h. All growth was performed using TMGa and pure O2 as the precursors and N2 as the carrier gas instead of the more widely used argon; no detectable nitrogen and carbon incorporation was observed by secondary ion mass spectrometry. For the homoepitaxy of Si-doped β-Ga2O3 films on (010) substrates, a room temperature Hall mobility of 148 cm2/V s was achieved at a carrier concentration of 1.26 × 1017 cm−3, with a growth rate of 2.6 μm/h. For the heteroepitaxy on sapphire, off-axis substrates exhibited enhanced crystallinity, as shown by the continued reduction of x-ray diffraction rocking curve full width at half maximum from 2834 to 1300 arcsec for 0° and 8° offcut sapphire substrates, respectively. The results demonstrate the scalability and potential advantages of this reactor design for manufacturing-scale β-Ga2O3 growth and offer new insights into the controllability of uniform high-quality films for power electronics applications.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor
- Date Crossref
- 13/05/2025
- Éditeur
- AIP Publishing
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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The University of Texas at Austin pays non établi dans la noticeUniversité ou école supérieure
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Texas Materials Institute pays non établi dans la noticeUniversité ou école supérieure
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Aixtron (Germany) pays non établi dans la noticeEntreprise
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United States Air Force Research Laboratory pays non établi dans la noticeStructure de recherche
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University of Texas at Austin 1 Department of Electrical and Computer Engineering pays non établi dans la noticeUniversité ou école supérieure
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University of Texas at Austin 2 Texas Materials Institute pays non établi dans la noticeUniversité ou école supérieure
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AIXTRON Ltd. 3 pays non établi dans la noticeEntreprise
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AIXTRON Inc. 4 pays non établi dans la noticeEntreprise
The University of Texas at Austin, Texas Materials Institute et Aixtron (Germany), avec 5 autres affiliations.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.