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Profil bibliographique

Sang‐Hoon Bae

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

138Publications signalées
7840Citations signalées
7Affiliations récentes

Les institutions déclarées

Les domaines associés

Thin-Film Transistor Technologies2D Materials and ApplicationsPerovskite Materials and ApplicationsAdvanced Sensor and Energy Harvesting MaterialsGraphene research and applications

Les publications récentes

2026 article OpenAlex

Deposition-Free Anti-Reflective Nanomembrane Lamination for Ultrathin Photodetectors

Hyung Jun Kwun, Soheil Ghods, Hochan Jang, Jungwoo Bong et autres

The transition toward function-centric three-dimensional heterogeneous integration (3DHI) requires ultrathin photodetectors with strong photoresponse and compatibility with vertical stacking. Monolayer transition metal dichalcogenides (TMDCs) are promising active layers for such systems but suffer from intrinsically limited light absorption. Moreover, strategies for enhancing …

kr, us, sg (code pays fourni par la source)

0 citations Nano Letters
2026 article OpenAlex

Governing Thermal Transport in Three-Dimensional Electronics

Kyubeen Kim, Minho Jin, Sanggeun Bae, Sejin Lee et autres

Thermal management has emerged as a materials bottleneck for three-dimensional integrated circuits, which are being actively explored to enable dense vertical connectivity and mitigate interconnect delay and energy consumption. Unlike 2D-structure chips, stacked tiers confine dissipation within a boundary-rich back-end-of-line (BEOL) heterostructure. …

us, kr, es, vn (code pays fourni par la source)

0 citations ACS Nano
2026 article OpenAlex

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS 2 Transistors (Adv. Funct. Mater. 45/2026)

Sanghyun Lee, Sumin Hong, Minho Park, Seongju Kim et autres

Single-Flake Transistor In the Research Article (DOI: 10.1002/adfm.202532204), Yongwoo Lee, Haksoon Jung, Jimin Kwon, and co-workers demonstrate that 3-8 layer MoS2 flakes can be reliably classified using pixel intensity contrast in the red, green, and blue optical channels. This approach enables large-scale …

kr, us (code pays fourni par la source)

0 citations Advanced Functional Materials
Accès ouvert 2026 article OpenAlex

Gate dielectric stack design for 2D materials-based electronics

Minho Jin, Hojun Kim, Sejin Lee, Sangmoon Han et autres

Two-dimensional (2D) semiconductors enable atomically thin channels and attractive electrostatics, but practical scaling increasingly hinges on gate-dielectric integration rather than channel performance. A key challenge is forming high-quality dielectrics on chemically inert, dangling-bond-free 2D surfaces while pushing equivalent oxide thickness to the …

kr, us (code pays fourni par la source)

1 citation Nano Convergence
2026 conference-paper OpenAlex

Material Innovation for 3D AI hardware

Sang‐Hoon Bae

Freestanding nanomembranes, ranging from 2D materials to ultrathin single-crystalline 3D membranes, have emerged as their exceptionally low stiffness ensures intimate skin or tissue conformality, minimizing mechanical mismatch and maximizing signal fidelity. Their single crystallinity offers high electronic performance, while their stackable form …

us (code pays fourni par la source)

0 citations
Accès ouvert 2026 article OpenAlex

Event-Driven Neuromorphic Gaze Decoding via e-Skin Electrooculography

Siwoo Jeong, Hyun Woo Ko, Ji‐Hoon Kang, Jonghyeon Ko et autres

Wearable eye-tracking technologies remain constrained by bulky optics, high power consumption, and reliance on external computation. We present a hardware-software codesigned electrooculography (EOG) interface that integrates ultrathin conformal e-skin sensors with resistive random-access memory (RRAM) crossbar, used to implement synaptic vector-matrix multiplication …

kr, us, by (code pays fourni par la source)

1 citation ACS Nano
Accès ouvert 2026 article OpenAlex

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS 2 Transistors

S. W. Ricky Lee, Sumin Hong, Minho Park, Seongju Kim et autres

ABSTRACT Atomically thin 2D semiconductors enable excellent electrostatic control even in highly scaled transistors with few‐nanometer gate lengths. The electrical characteristics of 2D transistors can vary significantly with the number of layers, yet how device behavior evolves with channel thickness remains statistically …

kr, us (code pays fourni par la source)

0 citations Advanced Functional Materials

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