2026
article
OpenAlex
Hyung Jun Kwun, Soheil Ghods, Hochan Jang, Jungwoo Bong et autres
The transition toward function-centric three-dimensional heterogeneous integration (3DHI) requires ultrathin photodetectors with strong photoresponse and compatibility with vertical stacking. Monolayer transition metal dichalcogenides (TMDCs) are promising active layers for such systems but suffer from intrinsically limited light absorption. Moreover, strategies for enhancing …
kr, us, sg
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2025
article
OpenAlex
Krishna Moorthy Ponnusamy, Jungwoo Bong, Hyunjin Lee, Jun‐Hui Choi et autres
Atomically thin two-dimensional molybdenum disulfide (MoS 2 ) has emerged as a promising semiconductor for next-generation optoelectronic applications. While chemical vapor deposition (CVD) enables large-area monolayer growth, achieving high-quality and reproducible synthesis without catalysts or promoters remains a critical challenge as common …
kr, sg, cn, in, us
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Accès ouvert
2025
article
OpenAlex
Soheil Ghods, Hochan Jang, Jun‐Hui Choi, Min Woo Kim et autres
Abstract The continued miniaturization of electronic and optoelectronic devices places stringent demands on contact engineering for 2D semiconductors, particularly for p ‐type materials, where achieving low‐resistance contacts remains a critical challenge. While van der Waals (vdW) contacts offer a promising route for …
kr, us, sg
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Accès ouvert
2025
erratum
OpenAlex
Seung‐Il Kim, Ji‐Yun Moon, Seok‐Ki Hyeong, Soheil Ghods et autres
In the version of the article initially published, some of the scale bars were mislabelled. In the Fig. 1 caption, the description now reading “Scale bar: 60 μm and 5 μm,” “60 μm” replaces “100 μm.” In the Supplementary Fig. 5 caption, …
us, kr
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2024
article
OpenAlex
Ji Kwon Bae, Soheil Ghods, Hyeon Ho Cho, Hochan Jang et autres
Semimetal electrodes for 2D semiconductors have been extensively studied; however, research on p-type semimetals has been limited due to the scarcity of materials that satisfy both high work functions and low resistances. In response, we investigated the behavior of NiSe 2 as …
kr
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2024
article
OpenAlex
Soheil Ghods, Hyunjin Lee, Jun‐Hui Choi, Ji‐Yun Moon et autres
The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work …
kr, us, sg
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Accès ouvert
2024
article
OpenAlex
Ji‐Yun Moon, Seung‐Il Kim, Soheil Ghods, Seungil Park et autres
Nondestructive Single-Atom-Thick Crystallographic Scanner In article number 2400091, Ji-Yun Moon, Dongmok Whang, Tae-Hoon Kim, Jae-Hyun Lee, and co-workers develop an efficient, accurate, and non-destructive crystallographic scanning technique for 2D materials by leveraging sticky-note-like van der Waals (vdW) assembling-disassembling. They visualize the detailed …
us, kr
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Accès ouvert
2024
article
OpenAlex
Ji‐Yun Moon, Seung‐Il Kim, Soheil Ghods, Seungil Park et autres
Crystallographic characteristics, including grain boundaries and crystallographic orientation of each grain, are crucial in defining the properties of two-dimensional materials (2DMs). To date, local microstructure analysis of 2DMs, which requires destructive and complex processes, is primarily used to identify unknown 2DM specimens, …
us, kr
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Accès ouvert
2024
article
OpenAlex
Seung‐Il Kim, Ji‐Yun Moon, Seok‐Ki Hyeong, Soheil Ghods et autres
Abstract Semi-infinite single-atom-thick graphene is an ideal reinforcing material that can simultaneously improve the mechanical, electrical, and thermal properties of matrix. Here, we present a float-stacking strategy to accurately align the monolayer graphene reinforcement in polymer matrix. We float graphene-poly(methylmethacrylate) (PMMA) membrane …
us, kr
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2024
article
OpenAlex
Mukkath Joseph Josline, Soheil Ghods, Saikiran Kosame, Jun‐Hui Choi et autres
Abstract Graphdiyne (GDY) has garnered significant attention as a cutting‐edge 2D material owing to its distinctive electronic, optoelectronic, and mechanical properties, including high mobility, direct bandgap, and remarkable flexibility. One of the key challenges hindering the implementation of this material in flexible …
kr, us
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2023
article
OpenAlex
Soheil Ghods, Ali Esfandiar, Jun‐Hui Choi, Azam Iraji zad et autres
ir, kr
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2023
article
OpenAlex
Seung‐Il Kim, Jin-Su Kim, Ji‐Yun Moon, Seok‐Ki Hyeong et autres
kr
(code pays fourni par la source)