Lauren M. Garten

Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics

Marshall B. Frye, Chanyoung Kim, Jeong‐Woo Sun, John Wellington-Johnson et autres

Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining the physical mechanisms behind these MW improvements is critical to reaching the full potential of HZO FeNAND. Here, we …

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Wafer-Scale Deposition of 2D SnSe with Monolayer-Thickness Precision

Lauren M. Garten, Hannah E. Wolfe, Jeremy Knight, Jonathan R. Chin et autres

2D SnSe presents considerable opportunities for transistors, optoelectronics, and photonics if wafer-scale deposition with monolayer thickness control can be achieved. This work answers this critical need by developing a mirror rastering pulsed laser deposition (PLD) approach that enables wafer scale coverage of …

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Local Chemistry-Guided Molecular Beam Epitaxy Growth of SnSe on MgO via Combined ReaxFF Modeling and Machine Learning

Mengyi Wang, Isaiah A. Moses, Jonathan R. Chin, Qihua Zhang et autres

Subtle variations in local growth chemistry can fundamentally alter the morphology of layered chalcogenide thin films, yet the atomic-scale mechanisms underlying this sensitivity remain poorly understood. Here, we combine molecular beam epitaxy (MBE) experiments, reactive molecular dynamics simulations, and machine learning analysis …

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Stabilizing Metastable Rare-Earth Ferrites on (111) Platinum via an Iron Oxide Interlayer

Marshall B. Frye, Jonathan R. Chin, Nicholas Parker, Steven E. Zeltmann et autres

High Resolution Image Download MS PowerPoint Slide The metastable P 6 3 cm phase of ScFeO 3 (h-ScFeO 3 ) is a multiferroic material, but instability on conductive substrates limits the development of next-generation memory and magnetoelectric sensors. Unfortunately, stabilization approaches developed …

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Thickness-modulated crystal structure and band gap of 2D SnSe deposited by molecular beam epitaxy

Marshall B. Frye, Jonathan R. Chin, Walter J. Smith, Stephen Daniel Funni et autres

Realizing the potential for 2D SnSe optoelectronics requires understanding the thickness dependence of structure, defects, and optical properties. We investigate the thickness-dependent crystal structure, band gap, and carrier lifetime of SnSe films deposited by molecular beam epitaxy (MBE) on (100) MgO. MBE …

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Degradation, Lifetime, and Failure Modes of Metal Oxide Varistors in Low-Voltage DC Circuit Breaker Applications

Yang Liu, Kayla Chuong, Yichuan Liu, Zhi Jin Zhang et autres

The metal oxide varistor (MOV) has been a critical enabling component for emerging applications in low-voltage dc circuit breakers (LVDCCBs). Although its properties align well with this application, its long-term performance, including degradation, failure modes, and service lifetime, remains poorly understood. Based …

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Temperature- and atmosphere-driven phase evolution in sol–gel synthesized barium nickelate powders

Ian C. Graham, Jeong‐Woo Sun, Kayla Chuong, Anna M. Österholm et autres

The findings of our study establish the phase–stoichiometry relationship in barium nickelate and methods to control phase formation during sol–gel synthesis are developed.

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Developing A Contactless Wafer Flexure Approach Based on Timoshenko Plate Deflection Theory for e31,f Piezoelectric Coefficient Measurements

Joshua Wahl, Stevie Limon, Christopher Wahl, Marshall B. Frye et autres

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Determining the effect of bismuth oxide on the microstructure and electrical response of cold‐sintered ZnO varistors

Kayla Chuong, Yang Liu, Thomas P. Forbes, Marshall B. Frye et autres

Abstract Microstructure homogeneity and grain size reduction are needed to ensure the current uniformity and reliability required in metal oxide varistors for DC circuit breakers. Cold sintering (CS)–a low‐temperature digestive liquid and high‐pressure densification process–has previously shown reduced grain growth, but it …

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Analyzing the impact of Se concentration during the molecular beam epitaxy deposition of 2D SnSe with atomistic-scale simulations and explainable machine learning

J Chin, Isaiah A. Moses, Mengyi Wang, Marshall B. Frye et autres

Pushing microelectronics to the atomic scale requires developing routes to deposit highly anisotropic 2D semiconductors like SnSe with atomic-layer control, select crystallographic orientations, and broad lateral coverage. In 2D chalcogenides introducing Se prior to deposition has been shown to promote lateral grain …

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Failure modes and remedies of a solid-state low voltage DC circuit breaker through 3,000,000＋ operation cycles

Yang Liu, Kayla Chuong, Zhi Jin Zhang, Lauren M. Garten et autres

This paper reports and analyzes the failure modes of a 1.2 kV low voltage (LV) solid-state dc circuit breaker (DCCB) over 3,000,000＋ opening operations. The motivation of this work is to study the assembly and component reliability of such a DCCB with …

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Epitaxial stabilization and tunable oxygen stoichiometry of R32 BaNiO3-x thin films via pulsed laser deposition

Ian C. Graham, Kayla Chuong, Marshall B. Frye, Anna M. Österholm et autres

Abstract Metastable materials can exhibit functionalities that outperform the ground state if stabilization routes can be identified. The metastable R 32 phase of barium nickelate (BNO) has been proposed to have increased catalytic activity, but the structure-stoichiometry-property relationship has not been established. …

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