Alwin Daus

Abrupt and Gradual Resistive Switching in Interface‐Modified IGZO Memristors

Krishna Rudrapal, Christian Spieth, Michael Oehme, Kathrin Küster et autres

ABSTRACT Indium gallium zinc oxide (IGZO) is a well‐established channel material for thin‐film transistors and has also emerged as a promising active layer for memristor applications. Further, IGZO memristors can exhibit both abrupt and gradual switching behaviors, which offer enhanced adaptability for …

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Seed-assisted polarity control of flexible WSe2 transistors and demonstration of CMOS inverter

Quỳnh Thị Phùng, Kha Minh Nguyen, Ji‐Yong Park, Alwin Daus

Abstract Polarity engineering of transition metal dichalcogenide field-effect transistors (FETs) has become a key requirement for complementary logic. Here, we report the polarity control of flexible tungsten diselenide (WSe 2 ) FETs with atomic layer deposited (ALD) top-gate dielectrics. We identify evaporated …

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Comprehensive TCAD-based geometry study on self-aligned coplanar top gate a-IGZO TFTs

Nikita Choudhary, Alwin Daus, Avinash Lahgere, Gangadhar Gupta et autres

Amorphous oxide semiconductor-based thin-film transistors (TFTs) are preferred for large-area, high-resolution displays and memory applications owing to their superior electrical properties. However, the geometry of TFTs plays a vital role in determining the device characteristics. In this study, we present a comprehensive …

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Influence of MOCVD MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability

Dennis Braun, Jing Liu, Poonam Devi, Vasilis A. Maroufidis et autres

Two-dimensional (2D) materials, particularly molybdenum disulfide (MoS2), have emerged as promising resistive switching materials for vertical memristors because they offer ultimate thinness and low-power switching. However, high variability in electrical characteristics remains a challenge, and addressing it through material engineering remains largely …

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Influence of MOCVD MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability

Dennis Braun, Jing Liu, Poonam Devi, Vasilis A. Maroufidis et autres

Two-dimensional (2D) materials, particularly molybdenum disulfide (MoS2), have emerged as promising resistive switching materials for vertical memristors because they offer ultimate thinness and low-power switching. However, high variability in electrical characteristics remains a challenge, and addressing it through material engineering remains largely …

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Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS 2 Memristors

Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin et autres

ABSTRACT Two‐dimensional (2D) materials such as molybdenum disulfide (MoS 2 ) show promise for memristor applications. Most MoS 2 memristors use vertical metal/MoS 2 /metal stacks with gold or silver active electrodes and rely on electron‐beam evaporation; sputtering is seldom used. This …

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The potential of semiconducting oxides in comparison to insulating oxides for memristor applications

Krishna Rudrapal, Alwin Daus

Memristors have emerged as promising candidates for next-generation memory, such as storage-class memory, embedded memory, and synaptic devices for neuromorphic computing. Their performance is strongly influenced by intrinsic material properties, particularly the formation and dynamics of defects such as oxygen vacancies. They …

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Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2

Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun et autres

ABSTRACT Two‐dimensional (2D) materials and their heterostructures offer promising pathways for intercalated ion migration and regulated filament growth in resistive switching (RS) devices, enabled by their van der Waals (vdW) gaps. In vertically aligned 2D materials, this vdW gap‐mediated ion transport holds …

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Reduced variability in threshold switches using heterostructures of siox and vertically aligned mos2

Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun et autres

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GeSn‐on‐Si Avalanche Photodiodes with High Responsivity and Low Dark Current

Maurice Wanitzek, H. Ramachandra, Christian Spieth, Alwin Daus et autres

Abstract GeSn‐on‐Si avalanche photodiodes (APDs) are emerging as a promising solution for low‐light detection in the short‐wave infrared (SWIR) spectral range, including applications in imaging and telecommunications. In this work, key challenges such as high dark current and limited responsivity are addressed …

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Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2

Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun et autres

Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. These vdW gaps can guide the migration of intercalated ions and thus regulate filament growth in resistive …

Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration

Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun et autres

Abstract Threshold switching (TS) is a non-permanent change in electrical resistance controlled by voltage modulation in two-terminal devices. Silver (Ag) filament-based TS has been observed in two-dimensional transition metal dichalcogenides, which are promising due to their van der Waals gaps, facilitating ion …

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