Influence of MOCVD MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability
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Le résumé fourni par la source
Two-dimensional (2D) materials, particularly molybdenum disulfide (MoS2), have emerged as promising resistive switching materials for vertical memristors because they offer ultimate thinness and low-power switching. However, high variability in electrical characteristics remains a challenge, and addressing it through material engineering remains largely unexplored. In this study, we investigate how the material properties of multilayer MoS2, grown via metal-organic chemical vapor deposition (MOCVD), influence the electrical variability in memristors with metal electrodes. To isolate the impact of morphology, we prepared two MoS2batches under distinct MOCVD growth conditions, yielding different surface roughness and grain sizes. The material with a smoother, more uniform surface and larger crystal grains yielded devices with significantly reduced electrical variability. The reduction in variability is associated with more uniform filament formation due to fewer large grain boundaries. At least 62 devices were tested per batch, providing a sound statistical basis for these results. Our work demonstrates that optimizing MoS2 material properties, particularly grain size and uniformity, can enhance the memristor reliability. It also highlights the potential of MOCVD to produce uniform, high-quality, large-area MoS2 films suitable for reliable memristor fabrication.
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Le contrôle bibliographique ouvert
Où se fait cette recherche
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AMO (Germany) pays non établi dans la noticeEntreprise
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RWTH Aachen University Chair of Electronic Devices pays non établi dans la noticeUniversité ou école supérieure
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Forschungszentrum Jülich pays non établi dans la noticeStructure de recherche
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Aixtron (Germany) pays non établi dans la noticeEntreprise
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University of Stuttgart pays non établi dans la noticeUniversité ou école supérieure
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AMO GmbH pays non établi dans la noticeEntreprise
AMO (Germany), Chair of Electronic Devices — RWTH Aachen University et Forschungszentrum Jülich, avec 3 autres affiliations.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.