Peter Reinig

Variability and Retention Investigation for Ferroelectric FET with Pseudo-MFMIS Structure

Ryo Ono, Kensuke Ota, Yusuke Shuto, Jun Okuno et autres

We systematically studied device-to-device variability and retention in pseudo metal-ferroelectric-metal-insulator-semiconductor (MFMIS) based ferroelectric memory. Threshold voltage ($\boldsymbol{V}_{\text {th }}$) variability is found to increase with shrinking MFM capacitor area, which is consistent with the random polarization switching in polycrystalline$\text{Hf}_{1-\mathrm{x}} \text{Zr}_{\mathrm{x}} \mathrm{O}_{2}$. In …

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Variability and Retention Investigation for Ferroelectric FET with Pseudo-MFMIS Structure

IEEE International Symposium on Reliability Physics 2026, Kentaro Akiyama, Ruben Alcala, Maximilian Lederer et autres

This work systematically investigates variability and retention in MFMIS ferroelectric memory. Vth variability, increasing with smaller MFM size due to random HZO polarization switching, is suppressed by channel scaling. Retention degradation is dominated by charge loss, becoming severe with thinner HZO or …

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Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar et autres

ABSTRACT Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non‐volatile memories, sensors, actuators, RF devices, and energy harvesters. Due to the metastable nature of the ferroelectric phase in these materials, dopants, and process parameters need to be …

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HfO2-based Ferroelectric Devices for Edge AI Application

Jun Okuno, Yusuke Shuto, Kensuke Ota, Tsubasa Yonai et autres

Non-Volatile Inverter With 3D Cylindrical Metal-Ferroelectric-Metal Capacitor Realizing Digitized Voltage Output for Computing-In-Memory

Ken-ichiro OTA, J. Okuno, T. Yonai, Ryo Ono et autres

A non-volatile$\text{Hf}_{0.5} \text{Zr}_{0.5} \mathrm{O}_{2}(\text{HZO})$-based Metal-Ferroelectric-Metal (MFM) inverter enabling AND/XNOR operations for Computation-in-Memory$\mathbf{C i M}$) is proposed. Owing to the symmetric threshold voltage$V_{\text {th }}$) shift in the nFET and pFET of the MFM inverter, a digitized output after the multiply operation is …

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Voltage and Temperature Acceleration of the Field-Induced Crystallization of Ferroelectric Hafnium Zirconium Oxide

Maximilian Lederer, Y. Najeeb, David Lehninger, T. Zhang et autres

The possibility of an electric field-induced crystallization of hafnium zirconium oxide into its ferroelectric phase enables new device concepts for hardware obfuscation and security applications. While first investigations into the physical mechanism of this effect have been reported, so far, device reliability …

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Ultra-Thin HZO Films for Low-Voltage Ferroelectric Memories: FINC Activation, BEoL Compatibility, and Reliability

David Lehninger, Yasser Najeeb, Tianren Zhang, Sukhrob Abdulazhanov et autres

We systematically investigate the crystallization onset and ferroelectric (FE) properties of$\mathbf{H f}_{0.5} \mathbf{Z r}_{0.5} \mathbf{O}_{2} (\mathbf{H Z O})$thin films with thicknesses between 4 nm and 12 nm. Grazingincidence X-ray diffraction (GIXRD) reveals that films$\geq 7 \text{nm}$crystallize below 400 °C, while thinner films …

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Enhanced Ferroelectricity in $\text{Hf}_{0.5} \text{Zr}_{0.5} \mathrm{O}_{2}$ Thin Films by NLA at Intermediate Laser Energy Density

David Lehninger, Tianren Zhang, Peter Reinig, Justine Barbot et autres

Ferroelectric devices are highly promising for the integration of non-volatile memories, particularly in ultra-lowpower edge-AI applications. However, the scaling of back end of line-compatible hafnium zirconium oxide (HZO) films is constrained by the increased crystallization temperature required for ultrathin films and the …

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Ionic cluster driven polymer network formation: Macroscopic evidence of network reversibility by X-ray microtomography

Subhradeep Mandal, Arpita Kundu, Eric Euchler, Radek Stoček et autres

: Significant progress has been made in the field of dynamic reversible networks in polymers, especially in unfilled systems. However, achieving similar reversibility in highly filled and mechanically robust elastomers with restricted chain mobility remains a formidable challenge. Furthermore, characterization techniques for …

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Characterization of Highly‐Oriented Carbon and Graphite Fibers by High‐Temperature Raman Spectroscopy

Muhannad Al Aiti, S. H. S. Boddu, Peter Reinig, Gianaurelio Cuniberti

In this study, carbon and graphite fibers (GFs) using confocal Raman microscopy at 405 and 532 nm wavelengths are analyzed and explored the influence of incident laser power and sample temperature on the Raman spectra. At room temperature, the G‐ and D‐band …

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HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C

Yusuke Shuto, Jun Okuno, Tsubasa Yonai, Ryo Ono et autres

For the first time, a 16-Kbit nonvolatile SRAM (NVSRAM) array based on a metal/ferroelectric/metal capacitor using a sub-10-nm-thick HfZrOx(HZO) layer has been experimentally demonstrated to obtain 100% bit yield. This capacitor is formed using the same integration process as that of a …

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Development of PECVD SiN Thin Films for Integrated Photonic Applications on 300 mm Wafers

Margarita Lapteva, Vinya Vibhuti, Mircea Traian Catuneanu, Jens Knobbe et autres

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