2025
article
OpenAlex
Jongmug Kang, Hye Ryeon Park, Seungbin Lee, Jin-Hyun Kim et autres
This work comprehensively investigates the thermal budget required to simultaneously achieve low-temperature process conditions and high endurance in atomic layer deposited ferroelectric Hf0.5Zr0.5O2 (HZO) thin films. Because a certain level of thermal budget is required to achieve ferroelectricity in 10 nm HZO …
kr, us
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2023
conference-paper
OpenAlex
Hye Ryeon Park, Jeong Gyu Yoo, Jong Mook Kang, Min Kwan Cho et autres
In this study, the thermal budget of atomic layer deposited Hf0.5Zr0.5O2(HZO) thin films have been investigated for memory applications. Specifically, using a furnace as a crystallization method of the HZO thin film, TiN/HZO/TiN capacitors were fabricated under various annealing temperature (300-500°C) and …
kr, us
(code pays fourni par la source)
Accès ouvert
2023
article
OpenAlex
Min Kwan Cho, Jeong Gyu Yoo, Hye Ryeon Park, Jong Mook Kang et autres
The ferroelectricity in Hf0.5Zr0.5O2 (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results …
kr, us
(code pays fourni par la source)
2021
article
OpenAlex
Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyojeong Kim et autres
In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget process is essential for integrating ferroelectric devices in the back-end-of-line to provide more functionalities …
kr, us
(code pays fourni par la source)
Accès ouvert
2021
article
OpenAlex
Hyojeong Kim, Yonghwan An, Yong Chan Jung, Jaidah Mohan et autres
In article number 2100028, Jiyoung Kim, Si Joon Kim, and co-workers comprehensively review the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material for obtaining fluorite-structure ferroelectrics with low-thermal-budget processes (400 °C or less). These low-thermal-budget …
us, kr
(code pays fourni par la source)
2021
article
OpenAlex
Hyojeong Kim, Yonghwan An, Yong Chan Jung, Jaidah Mohan et autres
Since the first report on the unexpected ferroelectricity of fluorite‐structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based on theoretical calculations and experimental demonstrations, it is now well known that fluorite‐structure ferroelectrics are compatible …
us, kr
(code pays fourni par la source)