Hsin‐Yuan Chiu

Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoO x Nanoparticle Contact Doping

Han-Yi Huang, Chen-Han Chou, Hsin‐Yuan Chiu, Yi-Wen Hsu et autres

High Resolution Image Download MS PowerPoint Slide Carbon nanotubes (CNTs) are promising candidates for next-generation back-end-of-line (BEOL) compatible devices due to their excellent scalability, energy efficiency, compatibility with low-temperature processes, and high-speed charge transport. However, top-gate carbon nanotube field-effect transistors (CNFETs) often …

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Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors

Chen‐Han Chou, He Huang, Hsin‐Yuan Chiu, Gang Wu et autres

Abstract Doping is a crucial technique for achieving high‐performance carbon nanotube (CNT) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band‐to‐band tunneling (BTBT) leakage. In this work, the n‐type doping of CNTs is investigated using aluminum …

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$1000 \times$ Lower Leakage in High-Performance Carbon Nanotube Nanosheet Fets

Nathaniel S. Safron, Hsin‐Yuan Chiu, Tzu‐Ang Chao, M. Passlack et autres

This work reports a Carbon Nanotube (CNT) Nanosheet PFET with record performance ($I_{\text{MAX}}=0.9 \text{mA} / \mu \mathrm{m}$), leakage ($I_{\text{MIN}}$of$20 \text{pA} / \mu \mathrm{m}$), and sub-$V_{\mathrm{T}}$slope of$93 \text{mV} / \text{dec}$at -0.5 V$V_{\text{DS.}}$This result is attributed to a larger electronic bandgap which simultaneously suppresses …

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Low‐κ Extension Doping for High‐Performance Carbon Nanotube Transistors: Toward High‐Speed, Energy‐Efficient Electronics

Hsin‐Yuan Chiu, Chen‐Han Chou, Gang Wu, He Huang et autres

Abstract Carbon nanotubes (CNTs) present considerable potential as next‐generation logic switches owing to their ultra‐thin structure and exceptional electrical properties. Although recent advancements have achieved impressive direct current (DC) performance in individual devices, research on the architectural design of CNT‐based transistors remains …

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Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors

Hsin‐Yuan Chiu, Nathaniel S. Safron, M. Passlack, Tzu‐Ang Chao et autres

High Resolution Image Download MS PowerPoint Slide In this work, we address the off-state leakage current challenge, while simultaneously demonstrating high drive current per CNT, in NMOS and PMOS carbon nanotube field-effect transistors (CNFETs). Increasing the bandgap from 0.6 to 0.85 eV …

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Nearly Ideal Subthreshold Swing in Carbon Nanotube Top-Gate p-FETs with EOT = 0.9 nm

Hsin‐Yuan Chiu, Chen-Han Chou, Gang Wu, He Huang et autres

High Performance Transistor of Aligned Carbon Nanotubes in a Nanosheet Structure

Nathaniel S. Safron, Tzu‐Ang Chao, Shengman Li, Shreyam Natani et autres

This work demonstrates the first nanosheet FET built on an array of dense aligned carbon nanotubes. In this device structure, the gate surrounds an aligned array of CNTs with$\approx 300\text{CNT}/\mu \mathrm{m}$. At a channel length of 70 nm the drive current exceeds$1 …

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Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

Nathaniel S. Safron, Hsin‐Yuan Chiu, Tzu‐Ang Chao, Sheng‐Kai Su et autres

Low n-type contact resistance (RC) of 9.7 kΩ/CNT to carbon nanotubes (CNT) with short contact length (LC) of 20 nm is achieved by utilizing solid-state n- doping near the metal contact. AIN doping with barrier layer demonstrated in this work enables transparent …

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Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su et autres

Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due …

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Building high performance transistors on carbon nanotube channel

Gregory Pitner, Nathaniel S. Safron, Tzu‐Ang Chao, Shengman Li et autres

High-performance and scaled transistors on carbon nanotube (CNT) channel are enabled by the quality of device component modules. This paper advances each module by single-CNT control experiments reporting: (1) remarkable n-type contact resistance of 5.1 k$\Omega$/CNT(20.4$\Omega-\mu$m for 250 CNT/$\mu$m) at 20 nm …

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High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics

Ang‐Sheng Chou, Yu‐Tung Lin, Yuxuan Lin, Ching-Hao Hsu et autres

Low resistance contact technology for 2D semiconductors is a key bottleneck for the practical application of 2D channel materials at advanced logic nodes. This work presents a novel Sb-Pt modulated contact technology which can alleviate the Fermi-level pinning effect and mediate the …

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Influence of surface modification on toluene adsorption on activated carbon fibers

Hsin‐Yuan Chiu, 邱信沅, Chiang Y.-C.