Krishna C. Saraswat

Precursor Engineering of Atomic Layer Deposition for Top-Gate Insulators on Monolayer MoS2 Transistors

Alexander B. Shearer, Jung-Soo Ko, Anh Tuấn Hoàng, Andreas Werbrouck et autres

Integration of ultrathin, high-quality gate insulators is critical to the success of two-dimensional (2D) semiconductor transistors in next-generation nanoelectronics. Here, we investigate the impact of atomic layer deposition (ALD) precursor choice on the nucleation and growth of insulators on monolayer MoS 2 …

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Chat craft: Innovative tool for Whatsapp chat analysis

Seema Mehla, Abhishek Kumar Sharma, Krishna C. Saraswat, Sachin Kumar et autres

In today’s world, WhatsApp has become a go-to app for communication among friends, family, and groups. Have you ever wondered what valuable insights we could extract from our WhatsApp chats? This work aims to explore just that! Using simple Python tools like …

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Achieving 1-nm-Scale Equivalent Oxide Thickness Top-Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors With CMOS-Friendly Approaches

Jung-Soo Ko, Alexander B. Shearer, Sol Lee, Kathryn M. Neilson et autres

Monolayer two-dimensional transition metal dichalcogenides (2-D TMDs) are promising semiconductors for future nanoscale transistors owing to their atomic thinness. However, atomic layer deposition (ALD) of gate dielectrics on 2-D TMDs has been difficult, and reducing the equivalent oxide thickness (EOT) with CMOS-compatible …

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Sub-Nanometer Equivalent Oxide Thickness and Threshold Voltage Control Enabled by Silicon Seed Layer on Monolayer MoS2 Transistors

Jung-Soo Ko, Sol Lee, Robert K. A. Bennett, Kirstin E. Schauble et autres

Low-power transistors based on two-dimensional (2D) semiconductors require ultrathin gate insulators, whose atomic layer deposition (ALD) has been difficult without adequate surface preparation. Here, we achieve sub-1 nm equivalent oxide thickness (EOT) on monolayer MoS 2 using HfO 2 and a simple, …

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Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal

Asir Intisar Khan, Akash Ramdas, Emily R. Lindgren, Hyun-Mi Kim et autres

The electrical resistivity of conventional metals such as copper is known to increase in thin films as a result of electron-surface scattering, thus limiting the performance of metals in nanoscale electronics. Here, we find an unusual reduction of resistivity with decreasing film …

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Direct X-Ray Measurements of Strain in Monolayer MoS$_{2}$ from Capping Layers and Geometrical Features

Kathryn M. Neilson, Marc Jaikissoon, Dante Zakhidov, Tara Peña et autres

Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how capping layers impart strain to monolayer MoS$_{2}$ using direct x-ray diffraction measurements of the …

CMOS-compatible strain engineering for monolayer semiconductor transistors

Marc Jaikissoon, Çağıl Köroğlu, Jerry A. Yang, Kathryn M. Neilson et autres

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Understanding the Impact of Contact-Induced Strain on the Electrical Performance of Monolayer WS 2 Transistors

Lauren Hoang, Marc Jaikissoon, Çağıl Köroğlu, Zhepeng Zhang et autres

High Resolution Image Download MS PowerPoint Slide Two-dimensional (2D) electronics require low contact resistance ( R C ) to approach their fundamental limits. WS 2 is a promising 2D semiconductor that is often paired with Ni contacts, but their operation is not …

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Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal

Asir Intisar Khan, Akash Ramdas, Emily R. Lindgren, Hyun-Mi Kim et autres

The electrical resistivity of conventional metals, such as copper, is known to increase in thin films due to electron-surface scattering, limiting the performance of metals in nanoscale electronics. Here, we find an unusual reduction of resistivity with decreasing film thickness in niobium …

Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization

Kathryn M. Neilson, Sarallah Hamtaei, Koosha Nassiri Nazif, Joshua M. Carr et autres

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to their desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells to date are fabricated in a nonscalable fashion, with exfoliated …

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The Impact of ALD Precursor Choice on Nucleation and Growth of Dielectrics on 2D Materials

Alexander B. Shearer, Jung-Soo Ko, Krishna C. Saraswat, Eric Pop et autres

Recently, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) have received significant attention due to their unique optical and electrical properties, lending themselves to exciting applications such as microelectronics, sensing, catalysis, photonics, and more. The properties of TMDs can be acutely impacted …

Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency Operation

Eros Reato, Paula Palacios, Jin−Ji Yang, Samsuri Bin Abd. Wahid et autres

Two-dimensional (2D) materials are promising candidates for back-end-of-the-line (BEOL) integration and flexible electronics due to their low-temperature fabrication and layer transfer processes [1] . 2D field-effect transistors (FETs) provide opportunities for radio frequency (RF) front-ends for wireless communications in flexible systems. However, …

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