Jong‐Won Lim

Comparative Study of Planar-gate and T-gate GaN HEMTs with Gate Length Scaling

Hyun‐Wook Jung, Minsoo Kang, Sung‐Jae Chang, Ho‐Kyun Ahn et autres

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8.5～11.1 GHz GaN Low-Noise Amplifier MMIC with 1 dB Gain Flatness

Sang‐Heung Lee, Ho‐Kyun Ahn, Hyun‐Wook Jung, Seong-Il Kim et autres

In this study, an 8.5～11.1 GHz low-noise amplifier monolithic microwave integrated circuit with a 1 dB gain flatness was designed and manufactured using the Electronics and Telecommunications Research Institute’s 0.2 μm GaN process technology. The first stage of the low-noise amplifier, having …

Gain-Boosted X-Band GaN Low-Noise Amplifier MMIC With Y/preZ-Embedding Network

In Hyuk Song, Seong Hee Han, Youn Sub Noh, Jong‐Won Lim et autres

This study improves the performance of an X-band gallium nitride (GaN) low-noise amplifier (LNA) using a gain-boosting embedding network. Using a gain-plane graph, analytical expressions are derived from the Z-parameters of the transistor to determine the element values of a Y/preZ-embedding network …

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Demonstration of GaN‐Based HEMTs Using Extremely Thin h‐BN Passivation Layer and Air Spacer for the RF Performance Improvement

Sung‐Jae Chang, Seokho Moon, Junhyung Jeong, Hyun‐Wook Jung et autres

Abstract GaN‐based high electron mobility transistors (HEMTs) is demonstrated using an extremely thin (≈ 5 nm) h‐BN passivation layer and air spacer, for the first time. The h‐BN passivation layer is grown by metal–organic chemical vapor deposition on top of the AlGaN …

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Dual Mechanisms of Value Expression: Intrinsic vs. Prompted Values in Large Language Models

Jongwook Han, Jong‐Won Lim, Injin Kong, You Hwan Jo

Large language models can express values in two main ways: (1) intrinsic expression, reflecting the model's inherent values learned during training, and (2) prompted expression, elicited by explicit prompts. Given their widespread use in value alignment, it is paramount to clearly understand …

Impact of lateral scaling on the electrical characteristics of AlGaN/GaN HEMTs

Hyun‐Wook Jung, Ilgyu Choi, Dohyun Kim, Sung‐Jae Chang et autres

Abstract This study systematically analyzes the effects of lateral scaling on the direct current (DC) and radio frequency (RF) characteristics of AlGaN/GaN high‐electron‐mobility transistors (HEMTs) by varying the geometric parameters gate length ( L G ), gate width ( W G ), …

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Compact X-band 30W Power Amplifier MMIC using 0.2 um GaN HEMT Technology

Y.S. Noh, Jong‐Won Lim, Sung‐Bum Bae, Byoung-Chul Jun

This paper describes a 2-stage compact X-band 30W GaN (Gallium Nitride) power amplifier MMIC (Monolithic Microwave Integrated Circuit) operating from 8.5 GHz to 10.5 GHz. The PA (Power Amplifier) MMIC is fabricated using WAVICE 0.2 μm GaN-on-SiC HEMT (High Electron Mobility Transistor) …

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Development of X-Band Receiver LNA and Switch MMICs using Wavice’s 0.2μm GaN Technology

Y.S. Noh, Jong‐Won Lim, Byoung-Chul Jun, Sung‐Bum Bae

In this paper, we designed and fabricated a low-noise amplifier and a switch MMIC for the receiver section of an X-band transceiver module using Wavice’s 0.2 μm GaN HEMT technology. The SPDT switch MMIC, fabricated with a size of 1.5×1.31 mm, exhibited …

Enhanced Electrochemical Stability of Solid‐State Electrolyte‐Coated High‐Voltage L i N i0.5 M n1.5 O 4 Cathodes in Li‐Ion Batteries

Jong‐Won Lim, Jihwan Kim, Deok‐Hye Park, Jae‐Sung Jang et autres

Spinel‐structured LiNi0.5Mn1.5O4 cathodes in lithium‐ion batteries have gained attention for their high operating voltage, which provides high energy density, and their cost advantages due to the absence of cobalt. However, issues such as low cycle and thermal stabilities have been identified, with …

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X-Band GaN Front-End MMIC for Radar Applications

Y.S. Noh, Jong‐Won Lim

In this study, we designed and manufactured an X-band front-end MMIC with a power amplifier, low-noise amplifier, and switch integrated into one chip using a 0.15 μm GaN HEMT process. The front-end MMIC (chip size: 4.5×2 mm2) showed receiver characteristics with a …

Machine learning-driven discovery of innovative hybrid solid electrolytes for high-performance all-solid-state batteries

Jiwon Sun, Juo Kim, Jimin Hong, Seungpyo Kang et autres

Research has actively focused on polymer/oxide-based hybrid solid electrolytes (HSEs) for next-generation all-solid-state batteries (ASSBs) with high energy densities and excellent safety. To accelerate the commercialization of ASSBs to replace existing lithium-ion batteries (LIBs), new HSE materials with excellent ionic conductivity, electrochemical …

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Electrospun Fe-ZIF derived carbon nanofibers for boosting adsorption and redox kinetics of polysulfides in lithium–sulfur batteries

Gang‐In Lee, Deok‐Hye Park, Jihwan Kim, Jae‐Sung Jang et autres

Fe–N active site-exposed carbon nanofibers were synthesized via electrospinning and Fe-ZIF in situ growth. The Fe–S bonds enhanced polysulfide adsorption and redox kinetics, exhibiting excellent cycling stability in lithium–sulfur batteries.

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