Development of X-Band Receiver LNA and Switch MMICs using Wavice’s 0.2μm GaN Technology

Le résumé fourni par la source

In this paper, we designed and fabricated a low-noise amplifier and a switch MMIC for the receiver section of an X-band transceiver module using Wavice’s 0.2 μm GaN HEMT technology. The SPDT switch MMIC, fabricated with a size of 1.5×1.31 mm, exhibited insertion loss of 0.7 dB, isolation of 31.5 dB, and power handling of 45.2 dBm in the operating frequency band of 9~10 GHz. The three-stage low-noise amplifier MMIC, fabricated with a size of 1.85×1.5 mm, exhibited gain of 23.2 dB, input/output return loss of greater than 9.9 dB, and noise figure of 1.4 dB in the operating frequency band of 9~10 GHz.

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