Timothy D. Brown

Multifunctional electrochemical memory stabilized by phase coexistence

Sangheon Oh, Adam L. Gross, Adam Christensen, Jacklyn Zhu et autres

Our growing computing needs, especially in applications that heavily rely on artificial intelligence (AI), motivate a search for new components that could substantially augment the performance of general-purpose digital computers. Beyond ON/OFF switching, new components with linear multistate analog resistive tuning, nonlinear …

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Electrothermal Channel Formation Driven by Spin-Crossover in LaCoO 3

Elena Salagre, Mahnaz Islam, Yeonju Yu, Sanjana Goyal et autres

In recent years, there has been an increase in the research interest in correlated oxides, partially due to their ability to transition between volatile resistance states when an electrical bias is applied. This property makes these materials suitable for artificial neuron design …

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Electrothermal Channel Formation Driven by Spin-Crossover in LaCoO 3

Elena Salagre, Mahnaz Islam, Yeonju Yu, Sanjana Goyal et autres

In recent years, there has been an increase in the research interest in correlated oxides, partially due to their ability to transition between volatile resistance states when an electrical bias is applied. This property makes these materials suitable for artificial neuron design …

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Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

Fatme Jardali, Gwyneth Svatek, R. Stanley Williams, Timothy D. Brown et autres

ABSTRACT The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor‐based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi‐transistor architectures restricting material choices and …

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Modulating charge transport via 2 MeV He+ irradiation in VO2

Rebeca M. Gurrola, Adelaide Bradicich, Fatme Jardali, John M. Cain et autres

Vanadium dioxide (VO2) is of interest for adaptive electronic applications such as neuromorphic neuristor devices and variable emissivity or tunable thermal control materials, thanks to its key property—a metal–insulator transition (MIT) at 68 °C that is accompanied by a dramatic change in …

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Electrothermally Induced Channel Formation in a Spin-Crossover Neuron

Elena Salagre, Mahnaz Islam, Yeonju Yu, Sanjana Goyal et autres

There is growing interest in correlated oxides that can switch between volatile resistance states when an electrical bias is applied, functioning as artificial neurons in neuromorphic computing systems. Most devices typically rely on first-order insulator–metal transitions (IMT). However, recent discoveries have shown …

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Single Crystals of Vanadium Oxides as a Lens for Understanding Structural and Electronic Phase Transformations, Ion Transport, Chemo-Mechanical Coupling, and Electrothermal Neuronal Emulation

John D. Ponis, Shruti Hariyani, George Agbeworvi, S. Chakraborty et autres

electron and spin localization and disorder couple strongly to structural preferences. The rich structural diversity manifests as a "rugged" free energy landscape with multiple interconvertible polymorphs. Such a landscape sets up structural, electronic, and magnetic transitions that underpin the promise of these …

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Mechanisms enabling reconfigurability and long-term retention in vanadium oxide electrochemical memory

Brian T. Zutter, Sangheon Oh, Timothy D. Brown, Saul Perez-Beltran et autres

Electrochemical random-access memory (ECRAM) works by electrochemical insertion of mobile ions into a functional material to change its redox state and its electronic conductivity. Here, the authors investigate ECRAM with thin film vanadium oxide channel and reservoir electrodes, arranged on single-crystal oxygen …

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Electrochemical Transformation of Phases on Vanadium Oxide for Reconfigurable Computing

Sandia National Laboratories (SNL-CA), Livermore, CA (United States), Sangheon Oh, Basic Energy Sciences, Adam L. Gross et autres

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An electro-optical Mott neuron based on niobium dioxide

Mahnaz Islam, Stephanie M. Bohaichuk, Timothy D. Brown, Sangheon Oh et autres

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Interface-Driven Performance and Thermal Effects in Dual-Gated ITO Transistors

Sumaiya Wahid, Çağıl Köroğlu, Robert K. A. Bennett, Kun Xu et autres

Amorphous oxide semiconductors like indium tin oxide (ITO) are promising for field-effect transistors (FETs) with high drive currents and low off-state currents [1–5], enabling back-end-of-line ($\leq 500^{\circ} \mathrm{C}$) [6] integration due to their ability to be deposited at low temperatures on a …

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Materials Selection Principles for Designing Electro‐Thermal Neurons

Fatme Jardali, Yeonju Yu, R. Stanley Williams, Suhas Kumar et autres

Abstract Artificial neurons exhibiting volatile threshold switching and action potential‐like oscillations are crucial for brain‐inspired computing. While Complimentary Metal‐Oxide‐Semiconductor (CMOS)‐based strategies require hundreds of transistors to simulate each neuron, neuronal oscillations arise spontaneously in individual electro‐thermal devices due to nonlinearities like the …

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