Material‐Driven Neuronal Oscillators and Filters via Active Reactance in CC‐NDR and VC‐NDR Electro‐Thermal Memristors

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ABSTRACT The continued scaling of artificial intelligence and telecommunications hardware is increasingly constrained by the power, bandwidth, and area limitations of transistor‐based circuits. Neuromorphic processor units, analog oscillators, and active inductors and capacitors rely on complex multi‐transistor architectures restricting material choices and incurring energy and footprint overhead. Here, we show that active reactance in electro‐thermal memristors provides an intrinsic, material driven route to neuronal oscillator dynamics and signal processing. Using a physics‐based compact modeling framework, we bridge negative differential resistance (NDR) and bias‐tunable reactance, which underlies spiking dynamics in electro‐thermal memristors. Memristors with negative temperature coefficients of resistance (TCR) manifest current‐controlled (CC‐) NDR and act as active inductors, thus generating spiking above a critical circuit capacitance; whereas memristors with positive TCR manifest voltage‐controlled (VC‐) NDR and active capacitance, leading to spiking above a critical inductance. By creating a compact model for La 0.7 Ca 0.3 MnO 3 as a representative VC‐NDR material and comparing it with LaCoO 3 manifesting CC‐NDR, we explain the physical origins of their distinct current‐voltage characteristics, reactive phase shifts and consequent spiking behaviors. Finally, we demonstrate tunable filtering enabled by the active reactance of electro‐thermal memristors, establishing them as a compact hardware platform for neuronal oscillator functionality and integrated filtering beyond conventional CMOS.

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