Tianli Duan

Synthesis and Characterization of Chromium Ion-Imprinted Biochar for Selective Removal of Cr(VI) from Wastewater

Tianli Duan, Linyan Chen, Zhengwei Luo, Hui Jiang et autres

The escalating issue of water pollution driven by rapid industrialization necessitates the development of advanced remediation technologies. In this study, a novel method for producing chromium (Cr(VI)) ion-imprinted biochar (Cr(VI)-IIP-PEI@NBC) from wheat residue was proposed. After acid-oxidative modifications, polyethyleneimine (PEI) and glutaraldehyde …

cn (code pays fourni par la source)

Enhanced In2O3 gas sensitivity to ethanol via synergistic effect of Gd doping and MOF-derivation

Juntang Dong, Junwei Li, Tingting Shao, Fuchun Zhang et autres

cn (code pays fourni par la source)

Effect of Ce doping on the microstructure and ethylene glycol sensing performance of ZnO

Juntang Dong, Na Li, Tingting Shao, Tianli Duan et autres

cn (code pays fourni par la source)

Highly sensitive ethylene glycol gas sensor based on SnO2/ZnO heterojunction composites

Juntang Dong, Tianli Duan, Tingting Shao, NingJuan Li et autres

cn (code pays fourni par la source)

Investigation on PECVD-deposited SiO2 underlayer in permalloy-based magnetoelectronic devices

Jinpeng Tian, Baojie Wang, Qiuming Song, Tianli Duan et autres

cn (code pays fourni par la source)

New Materials Used in IC

Yunyi Fu, Tianli Duan, Hongyu Yu

cn (code pays fourni par la source)

Facile synthesis of noble metal decorated carbon nanostructure for SERS detection

Kui Lai, Yinghao Xu, Jiahui Chen, Chenjie Gu et autres

Abstract Surface enhanced Raman scattering (SERS) is a highly sensitive spectral analysis technique for ultra‐low trace molecule detection. Conventionally, noble metals like silver (Ag) and gold (Au) are used to prepare the SERS substrates; however, it usually requires careful experiment design and …

cn (code pays fourni par la source)

A novel fabrication technique for three-dimensional concave nanolens arrays

Tianli Duan, Kang Xu, Zhihong Liu, Chenjie Gu et autres

A novel facile technique is proposed for fabricating three-dimensional (3D) concave nanolens arrays on a silicon substrate. The technique leverages an inherent characteristic of the polymethyl methacrylate (PMMA) resist during inductively coupled plasma (ICP) etching. The tendency for plasma ions to accumulate …

cn, sg (code pays fourni par la source)

A Dummy-Pattern-Assisted Lift-Off Method for Small and Dense Nanostructures

Tianli Duan, Kang Xu, Yao Wang, Xuhang Ma et autres

Abstract Nanostructures have attracted much attention because of wide application. Moreover, most of the nanostructures play the function through small and dense patterns in irregular shape, which indicates that the fabrication process is utmost important. In general, a lift-off process is used …

cn (code pays fourni par la source)

A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

Tianli Duan, Chenjie Gu, D. S. Ang, Kang Xu et autres

gas flow during ICP etching, we could achieve nanopillar arrays with sub-30 nm diameter, over 20 aspect ratio, and steep sidewall without collapse. The proposed technique may help break the limit of traditional nanopillar array fabrication, and be applied in many areas, …

mx, cn, us, sg (code pays fourni par la source)

The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping

Chenjie Gu, Canliang Zhou, D. S. Ang, Xin Ju et autres

Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the …

cn, sg (code pays fourni par la source)

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Fanming Zeng, Judy X. An, Guangnan Zhou, Wenmao Li et autres

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations …

cn (code pays fourni par la source)