Dahui Jeon

Atomic layer deposition of Ga2O3 over a wide temperature range using a novel heteroleptic precursor (N,N-di-tert-butylacetimidamido)dimethylgallium (DBADMGa)

I. G. Hwang, J K Lee, Dahui Jeon, Rino Choi et autres

kr, us (code pays fourni par la source)

Atomic Layer Deposition of Ga2O3 over a Wide Temperature Range Using a Novel Heteroleptic Precursor (N,N-di-tert-butylacetimidamido)dimethylgallium (DBADMGa)

In-Hwan Baek, I. G. Hwang, J K Lee, Dahui Jeon et autres

kr (code pays fourni par la source)

Resolving the contact–channel trade-off in p-type SnO thin-film transistors via self-aligned fluorine plasma treatment

Jaemin Jung, Chi Hun Lee, Jaeyoon Shim, Dahui Jeon et autres

kr (code pays fourni par la source)

Electrical Performance Enhancement of p-Type SnO TFTs via Back-Channel Engineering with Fluorocarbon Plasma Treatment

Jaemin Jung, Jae‐Yoon Shim, Dahui Jeon, Taek‐Mo Chung et autres

Tunable Scavenging Effects of Al2O3 Passivation via Oxidant Selection for High-Performance Tellurium TFTs

Jae‐Yoon Shim, Jaemin Jung, Dahui Jeon, Inhong Hwang et autres

Toward Infinite Selectivity: Area-selective Atomic Layer Deposition of Ruthenium Enabled by CFx Plasma Treatment

Dahui Jeon, Chee Won Chung, In-Hwan Baek

Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors

Seung Ho Ryu, Inhong Hwang, Dahui Jeon, Sung Ki Lee et autres

kr, us (code pays fourni par la source)

Atomic layer deposition of oxide semiconductor thin films for transistor applications: a review

Inhong Hwang, Minki Choe, Dahui Jeon, In-Hwan Baek

kr (code pays fourni par la source)

Recent progress of the p-type oxide thin films for transistor applications: Nickel oxide, Tin oxide, and Copper oxide

Minki Choe, Dahui Jeon, Inhong Hwang, In‐hwan Baek

kr (code pays fourni par la source)