2018
conference-paper
OpenAlex
Geum-Jong Bae, Dong-il Bae, Mingu Kang, S. M. Hwang et autres
As the most feasible solution beyond FinFET technology, a gate-all-around Multi-Bridge-Channel MOSFET (MBCFET) technology is successfully demonstrated including a fully working high density SRAM. MBCFETs are fabricated using 90% or more of FinFET processes with only a few revised masks, allowing easy …
kr
(code pays fourni par la source)
2007
conference-paper
OpenAlex
Suyong Han, J.M. Park, Si-Ok Sohn, J.B. Lee et autres
The pad-polysilicon side contact (PSC) has drastically improved the performance of the partially-insulated bulk FinFET (Pi-FinFET). PSC enabled to dope a source and drain (S/D) of the fin structure uniformly from the top of the fin to the Pi layer. Since the …
kr, us
(code pays fourni par la source)
2002
conference-paper
OpenAlex
W.J. Kim, B.J. Kim, C.J. Lee, D. J. Harra
Information is presented on reactively sputter-deposited TiN films used as a barrier layer in the production of ULSI-level DRAMS. Titanium, TiN, and aluminium step coverage data are shown for ULSI level topology. Standby current and junction leakage current data are presented for …
kr, us
(code pays fourni par la source)