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Profil bibliographique

In-Soo Yoon

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

7Publications signalées
67Citations signalées
1Affiliations récentes

Les institutions déclarées

Les domaines associés

Semiconductor materials and devicesAdvanced Data Storage TechnologiesSemiconductor Lasers and Optical Devices3D IC and TSV technologiesPhotonic and Optical Devices

Les publications récentes

2026 conference-paper OpenAlex

A 2Tb 4b/Cell 6-Plane 3D-Flash Memory with 37.6Gb/mm 2 Bit Density and >85MB/s Write Throughput

Jayanth M. Thimmaiah, Ryuji Yamashita, In-Soo Yoon, Jason Li et autres

A 332-WL-layer stacked 2Tb 4b/Cell 6-plane 3D Flash memory achieves an areal density of$37.6 \text{Gb} / \text{mm}^{2}$. An 8 kB -physical and 16 kB -logical page architecture realizes a$<65 \mu \mathrm{s}$read latency and a$>85 \text{MB} / \mathrm{s}$program throughput. Write throughput is enhanced …

in, jp, us (code pays fourni par la source)

2 citations
2025 article OpenAlex

A 29-Gb/mm 2 1-Tb 3-b/Cell 3-D Flash Memory With CMOS Direct Bonded Array (CBA) Technology

Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Yutaka Shimizu et autres

This article reports a 1-Tb 3-b/cell 3-D flash memory fabricated with CMOS direct bonded array (CBA) technology. Compaction of circuits and wires achieves the highest bit density in the world over 29 Gb/mm2with 332-word line (WL) layers. The bit density is improved …

jp, us (code pays fourni par la source)

1 citation IEEE Journal of Solid-State Circuits
2025 conference-paper OpenAlex

A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os

Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Junya Matsuno et autres

3D Flash memory [1]–[8] is expanding into AI applications, where high-speed I/O and high read performance is essential, particularly for big data applications [1], [4]. It is critical for high-speed circuits to be small enough and to not overhang the memory array …

us (code pays fourni par la source)

6 citations
2022 article OpenAlex

A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface

J. Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama et autres

A 1 Tb 4-b/cell 162-layer 3-D flash memory achieves 15-Gb/mm2 areal density and delivers program throughput up to 60 MB/s and the best case tR of 65$\mu \text{s}$by employing 8-kB wordline (WL) central stair structure and contact-through-WL (CTW) architecture. IO speed of …

us (code pays fourni par la source)

9 citations IEEE Journal of Solid-State Circuits
2022 conference-paper OpenAlex

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

J. Yuh, Jason Li, Heguang Li, Yoshihiro Oyama et autres

The presented 1Tb 4b/cell 162 WL layer 3D Flash memory achieves an areal density of 15 Gb/mm2which is 8.7% higher than prior work [1]. High-performance is the key enabler for 4b/cell NAND Flash to enter mainstream systems. This work delivers a 60MB/s …

us (code pays fourni par la source)

30 citations 2022 IEEE International Solid- State Circuits Conference (ISSCC)

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