Mahesh Raj Neupane

High Throughput X‐Ray Characterization of Defects in Wide‐Bandgap Semiconductors

Tia Gray, Elias Garratt, Xiang Zhang, Shisong Luo et autres

ABSTRACT Wide‐bandgap materials are central to next‐generation high‐power, radio‐frequency, and quantum technologies, yet their performance is often limited by crystalline defects such as dislocations. Single‐crystal diamond in particular exhibits exceptional electronic and thermal properties, however, accurately and scalably quantifying defect density remains …

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Diamond Epilayers with Subnanometer Surface Roughness for Enhanced Device Performance

X. Zhang, Mingfei Xu, Elias Garratt, Shisong Luo et autres

Diamond’s exceptional properties make it a promising material for electronics, optoelectronics, and quantum technologies. The development of high-quality and smooth diamond epilayers has emerged as a critical advancement for achieving superior performance and reliability of diamond-based devices. Here, we report the growth …

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Interface structure and electronic properties in cubic boron nitride — Diamond heterostructures

Cody L. Milne, Hector Gomez, Adway Gupta, A. Glen Birdwell et autres

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Structural and electronic properties of H- and O-functionalized diamond (100) with variable coverage

James Cruz, Hector Gomez, Michael N. Groves, Mahesh Raj Neupane

Diamond combines exceptional mechanical, thermal, and electronic properties, making it a prime candidate for high-power and high-frequency electronics. Its performance, however, is strongly influenced by atmospheric contaminants and the resulting surface chemistry. Using density functional theory (DFT), we investigated the (100) surface …

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Growth of Cubic Boron Nitride Thin Film on Diamond Surface

Abhijit Biswas, Tymofii S. Pieshkov, Cody L. Milne, Hector Gomez et autres

High-power electronics demand high-speed, highly integrated electrical circuits with excellent heat dissipation. Owing to their ultrawide-bandgap, high thermal stability and chemical inertness, the heterostructure of cubic boron nitride (c-BN) and diamond are predicted as promising power-efficient materials for next-generation electronics. Therefore, extensive …

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Interface Structure and Electronic Properties in Cubic Boron Nitride - Diamond Heterostructures

Cody L. Milne, Hector Gomez, Adway Gupta, A. Glen Birdwell et autres

Heterointerfaces of cubic boron nitride (cBN) with diamond have garnered significant interest due to their ultra-wide bandgaps and small lattice mismatch ($\sim1.5$\%), offering promising advancements in high-power and high-frequency electronic devices. However, the realization of this heterointerface has been limited by challenging …

Ion‐Implantation, Epilayer Growth, and Lift‐Off of High‐Quality Diamond Films

Xiang Zhang, Tymofii S. Pieshkov, Di Chen, Suresh Nonis et autres

Abstract The development of high‐quality diamond films is pivotal for driving advances in quantum technology, power electronics, and thermal management. The ion implantation and lift‐off technique has emerged as a crucial method for fabricating diamond films with controlled thickness and scalable production …

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Thermal boundary conductance of metal–diamond interfaces predicted by machine learning interatomic potentials

Khalid Zobaid Adnan, Mahesh Raj Neupane, Tianli Feng

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Correction to “A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces”

Tianli Feng, Hao Zhou, Zhe Cheng, Leighann Sarah Larkin et autres

ADVERTISEMENT RETURN TO ARTICLES ASAPPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to "A Critical Review of Thermal Boundary Conductance across Wide and Ultrawide Bandgap Semiconductor Interfaces"Tianli Feng*Tianli FengMore by Tianli Fenghttps://orcid.org/0000-0002-7284-5657, Hao ZhouHao ZhouMore by Hao Zhouhttps://orcid.org/0000-0001-6499-1921, Zhe ChengZhe ChengMore by Zhe Chenghttps://orcid.org/0000-0001-7827-2979, …

Benchmarking diamond surface preparation and fluorination via inductively coupled plasma-reactive ion etching

Tia Gray, Xiang Zhang, Abhijit Biswas, Tanguy Terlier et autres

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Evolution of Berry phase and half-metallicity in Cr2Te3 in response to strain, filling, thickness, and surface termination

Sohee Kwon, Yuhang Liu, Hang Chi, Gen Yin et autres

${\mathrm{Cr}}_{2}{\mathrm{Te}}_{3}$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and nontrivial band topology. The nontrivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half-metallicity. …

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Evolution of Berry Phase and Half-Metallicity in Cr$_2$Te$_3$ in Response to Strain, Filling, Thickness, and Surface Termination

Sohee Kwon, Yuhang Liu, Hang Chi, Gen Yin et autres

Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half …