Author response for "High-performance visible-to-near infrared phototransistor based on SnSe/SnS2 van der Waals heterostructure"
Ganlu Fan, Weishuai Duan, Mengjiao Dong, Pengyu Zhou et autres
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Ganlu Fan, Weishuai Duan, Mengjiao Dong, Pengyu Zhou et autres
Ganlu Fan, Weishuai Duan, Mengjiao Dong, Pengyu Zhou et autres
As a member of two-dimensional materials, tin disulfide (SnS 2 ) holds great potential for highly sensitive detectors used in high-resolution, low-power imaging.
cn (code pays fourni par la source)
Xiyu Jia, Weishuai Duan, Mingchen Xu, Ganlu Fan et autres
Near-violet(NV)detectors based on two-dimensional materials have attracted much attention due to their atomic-scale thickness and various band gaps. Among them, tin disulfide (SnS2) has demonstrated significant potential for high-performance NV detectors due to its unique photoelectric properties. However, SnS2-based NV detector still …
cn (code pays fourni par la source)
Xinfa Zhu, Weishuai Duan, Xiancheng Meng, Xiyu Jia et autres
Abstract The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors …
cn (code pays fourni par la source)
Ganlu Fan, Weishuai Duan, Mengjiao Dong, Pengyu Zhou et autres
cn, vn (code pays fourni par la source)
Weishuai Duan, Zhe Liu, Xinfa Zhu, Biao He et autres
Near-ultraviolet (NUV) detectors based on two-dimensional (2D) materials have garnered considerable attention owing to their atomic-scale thickness, varied bandgap, and strong interaction with incident light. In this work, homostructures composed of tin disulfide/chromium–doped tin disulfide (SnS2/Cr–SnS2) were proposed for 405 nm near-ultraviolet …
cn (code pays fourni par la source)
Zhe Liu, Xiyu Jia, Weishuai Duan, Xinfa Zhu et autres
Abstract Tin disulfide (SnS2) is an emerging 2D‐layered metal dichalcogenide with promising application potential for highly sensitive and fast‐response‐speed photodetectors. However, SnS2‐based photodetectors still have drawbacks that limit their practical and commercial applications. Herein, an effective route is proposed for constructing SnS2/indium‐doped …
cn (code pays fourni par la source)
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