High Photoresponsivity and Response Speed of Visible‐Light Photodetectors Based on Tin Disulfide/Indium‐Doped Tin Disulfide Homostructures
Rattachement africain : cn. Niveau de preuve : code pays fourni par la source.
Le résumé fourni par la source
Abstract Tin disulfide (SnS2) is an emerging 2D‐layered metal dichalcogenide with promising application potential for highly sensitive and fast‐response‐speed photodetectors. However, SnS2‐based photodetectors still have drawbacks that limit their practical and commercial applications. Herein, an effective route is proposed for constructing SnS2/indium‐doped SnS2 homostructures to improve photodetector performance. Vertical SnS2/Sn0.991In0.009S2 homostructures and photodetectors based on these homostructures were fabricated via a polydimethylsiloxane‐assisted dry‐transfer method. The photodetectors exhibit excellent performance, including a high photoresponsivity of up to 271.7 A W−1, high normalized detectivity of up to 2.13 × 1012 cm Hz1/2 W−1, and fast response time of ≈10 ms. The pseudo‐built‐in electrical field of the SnS2/Sn0.991In0.009S2 homostructure results in the superior performance of the photodetectors based on this material compared to that based on individual SnS2 and Sn0.991In0.009S2 thin layers, most 2D materials, and commercial photodetectors (e.g., THORLABS FD11A Si, and FGA01 InGaAs). This study provides a facile and effective approach to enhance the performance of SnS2‐based photodetectors and paves the way for future applications of photodetectors based on SnS2 and other 2D materials.
Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.
Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- High Photoresponsivity and Response Speed of Visible‐Light Photodetectors Based on Tin Disulfide/Indium‐Doped Tin Disulfide Homostructures
- Date Crossref
- 03/12/2022
- Éditeur
- Wiley
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
-
Hebei University of Technology State Key Laboratory of Reliability and Intelligence of Electrical Equipment pays non établi dans la noticeUniversité ou école supérieure
-
State Key Laboratory of Reliability and Intelligence of Electrical Equipment pays non établi dans la noticeStructure de recherche
-
Zhejiang Lab pays non établi dans la noticeStructure de recherche
-
Zhejiang University Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications pays non établi dans la noticeUniversité ou école supérieure
State Key Laboratory of Reliability and Intelligence of Electrical Equipment — Hebei University of Technology, State Key Laboratory of Reliability and Intelligence of Electrical Equipment et Zhejiang Lab, avec 1 autre affiliation.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.