Vishal A. Tiwari

Protection of Firewall Rules Using Secure Storage for the Infotainment System

Sreedhar Reddy Pacharla, Pavan Kumar Prasad, Suryansh Vimlendra, Saurav Varshney et autres

A modern car is enhancing the driver’s in-vehicle experience through the infotainment system which is a combination of both information and entertainment. The Original Equipment Manufacturers (OEM) are being driven to provide this luxurious experience through the development and adaptation of new …

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TCAD for logic technology process development

S. Cea, S. Berrada, Kasturi Ghosh, Sayed Hasan et autres

Process and device simulation has been invaluable for logic technology development for many technology nodes. The main goal of this work will be to review the broad and diverse simulation hierarchy that is used in industry to understand and optimize both current …

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Threat/Hazard Analysis and Risk Assessment: A Framework to Align the Functional Safety and Security Process in Automotive Domain

Vivek Agrawal, Balasubramanian Achuthan, Asadullah Ansari, Vishal A. Tiwari et autres

The modern automobile consists of several Electronic Control Units (ECUs) to support various safety-critical functionalities. The underlying systems are susceptible to safety and cybersecurity attacks as the involved ECUs are interconnected. The security attacks can lead to disrupting the safe operation of …

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State-of-the-art TCAD: 25 years ago and today

M. Stettler, S. Cea, Sayed Hasan, Lei Jiang et autres

In the past 25 years, process and device TCAD used in direct support of industrial process development has undergone radical change. In the era of Dennard scaling [1], TCAD efforts in manufacturers such as Intel could arguably be described as advanced applications …

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Higher Order Low-Pass Filter Using Single Current Differencing Buffered Amplifier

Mourina Ghosh, Bal Chand Nagar, Vishal A. Tiwari

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OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFET

Vishal A. Tiwari, R. Divakaruni, Terence B. Hook, Deleep R. Nair

Parameter variations in the transistor characteristics with new materials and process steps pose an increasing challenge for CMOS scaling to nanometer feature size. Alternate channel materials such as silicon- germanium (SiGe) for p-type field effect transistor (pFET) at 32 nm and beyond …

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Analysis of systematic and random variation of gate-induced drain leakage in silicon-germanium channel pFET

Vishal A. Tiwari, Ch. L. N. Pavan, Deleep R. Nair, R. Divakaruni et autres

Variability in the transistor parameters play a significant role in CMOS scaling to nanometer feature sizes. New channel materials such as silicon-germanium for pFET at 32nm and beyond are useful because of higher mobility and lower threshold voltage. However, gate-induced drain leakage …

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Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages

Vishal A. Tiwari, R. Divakaruni, Terence B. Hook, Deleep R. Nair

Abstract Silicon–germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high- k metal gate technology because of its lower threshold voltage and …

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Trap-Assisted Tunneling Effects on Gate-Induced Drain Leakage in Silicon-Germanium Channel pFET

Vishal A. Tiwari, A. Scholze, R. Divakaruni, Deleep R. Nair

Effect of Germanium Preamorphization Implant on Performance and Gate-Induced Drain Leakage in SiGe Channel pFET

Vishal A. Tiwari, Young Way Teh, D. Jaeger, R. Divakaruni et autres

Silicon-germanium (SiGe) channel pMOSFET is considered as a replacement for silicon channel device for 32-nm node and beyond, because of its lower threshold voltage and higher channel mobility. Lower SiGe bandgap makes gate-induced drain leakage (GIDL) important for low leakage, high threshold …

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Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET

Vishal A. Tiwari, A. Scholze, R. Divakaruni, Deleep R. Nair

Silicon-Germanium is used as an alternative channel material for pFET in high-k metal gate-first technologies for 32 nm and beyond. However, gate-induced drain leakage (GIDL) is significant at nominal bias due to band-to-band tunneling (BTBT) at the gate-to-drain overlap surface and gate …

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Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET

Vishal A. Tiwari, D. Jaeger, A. Scholze, Deleep R. Nair

Silicon-germanium is an alternative channel material for pMOS FETs at 32-nm node and beyond because of lower threshold voltage and higher channel mobility in high-k metal gate technology. However, gate-induced drain leakage (GIDL) is a major concern at low power technology nodes …

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