Two-dimensional UV photodetection using hybrid structure of monolayer WS2 and Ti2N MXene quantum dots
Shamima Afroz, Anir S. Sharbirin, Annas S. Ariffin, Trang Thu Tran et autres
kr (code pays fourni par la source)
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Shamima Afroz, Anir S. Sharbirin, Annas S. Ariffin, Trang Thu Tran et autres
kr (code pays fourni par la source)
Vu Khac Dat, Minh Chien Nguyen, Hai Phuong Duong, Tien Dat Ngo et autres
Control of carrier polarity in two-dimensional van der Waals semiconductors is essential for integrated electronic and optoelectronic systems. Here, we demonstrate that substitutional vanadium doping enables robust p-type modulation in multilayer WSe2 with pronounced thickness-dependent transport behavior. The transfer curve of V-doped …
vn, kr, be (code pays fourni par la source)
Ngoc Thanh Duong, Swathi Krishna, Minh Chien Nguyen, Hang Sik Kim et autres
The discovery of two-dimensional (2D) semiconducting ferroelectric (SFe) materials marks a pivotal step toward the realization of ferroelectric random-access memory. Despite their potential as ideal platforms for ultrafast switching and ultralow power consumption, SFe monolayers remain largely unexplored. In this work, we …
vn, kr, us, cn (code pays fourni par la source)
Thi Uyen Tran, Ngoc Thanh Duong, Ngoc Linh Nguyen, Nayeong Lee et autres
Thermal-energy harvesting, which converts heat into electrical signals, offers a promising route toward sustainable energy utilization. However, achieving efficient and stable thermal-electrical conversion in low-dimensional materials remains challenging. Although few-layer Tellurene (Te) exhibits pyroelectricity owing to intrinsic broken symmetry, this effect is …
kr, vn (code pays fourni par la source)
Feng Wang, Yoojoo Yun, Jung Hyun Ryu, Kyonghwa Song et autres
ABSTRACT Developing flexible conductors that combine high conductivity, stable MHz‐range electrical behavior, and mechanical durability remains a challenge. This is primarily because conventional bulk‐type metals suffer from frequency‐dependent AC‐resistance increases, while standard composites often exhibit poor interfacial integrity. Here, we address these …
kr (code pays fourni par la source)
Suar Oh, Yuseong Heo, Young-Min Kim, Seong Chu Lim
Vanadium dioxide (VO 2 ) undergoes a rutile-to-monoclinic metal–insulator transition (MIT) at 340 K. Marked by abrupt resistivity changes of 10 4 –10 5 Ω·cm, this property has long attracted interest for electronic applications. However, when VO 2 is a few nanometers …
kr, au (code pays fourni par la source)
Van Dam, Ngoc Thanh Duong, Văn Tú Vũ, Minh Chien Nguyen et autres
Vertical field effect transistors (VFETs) using graphene and transition metal dichalcogenide (TMD) heterostructures are promising for downsizing the channel length to a monolayer TMD thickness of 0.65 nm. However, graphene/monolayer TMD/metal VFETs struggle with a low on/off ratio due to gate field …
kr, us (code pays fourni par la source)
Wonkyeong Son, Jeeeun Kim, Tae Young Kim, Jae Myeong Lee et autres
With significant advances in self-powered, stretchable, and skin-attachable electronics, harvesting energy from ubiquitous moisture has emerged as a promising method for powering wearable and adhesive devices. However, current moisture energy harvesting (MEH) devices still face challenges in direct application to skin surfaces, …
kr (code pays fourni par la source)
Krishna P. Dhakal, Trang Thu Tran, Taegeon Lee, Wooseon Choi et autres
Abstract Stacking monolayers of two‐dimensional (2D) transition metal dichalcogenides with different twist angles can provide a way to tune their quantum optical and electronic characteristics. This study demonstrates that the bandgap energy and interlayer coupling strength of twisted bilayer (tBL) ReS 2 …
kr, us (code pays fourni par la source)
Thi Uyen Tran, Ngoc Thanh Duong, Dae Young Park, Hai Phuong Duong et autres
Seong Chu Lim, Ngoc Thanh Duong, Swathi Krishna, Minh Chien Nguyen et autres
kr, us (code pays fourni par la source)
Seongjae Oh, Seon Lee, Hyun‐Soo Kim, Young‐Chul Song et autres
kr (code pays fourni par la source)
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