2025
conference-paper
OpenAlex
Yushan Lee, Xingtian Wang, Jiahui Duan, Guanyu Zhou et autres
In this work, we demonstrate the potential of germanium-doped indium oxide (Ge:In2O3) as a promising oxide semiconductor offering an improved tradeoff among mobility, electrical stability, and crystallization resistance. This makes it suitable for both500 °C 1T1C DRAM process. Through a comparative study …
us, fi, sg
(code pays fourni par la source)
2025
article
OpenAlex
Xuezhong Niu, Shan Zhi Deng, Fu-Xiang Liang, Khandker Akif Aabrar et autres
In this work, we report the observation of a forming step in the back-end-of-line (BEOL) oxide channel ferroelectric FET (FeFET). This behavior has typically been neglected but is deeply rooted in the polarization switching mechanism. It could support one-time programmability (OTP) on …
us
(code pays fourni par la source)
2025
conference-paper
OpenAlex
John A. Howe, Yixin Qin, Shan Zhi Deng, Kai Ni
Ferroelectric hafnium oxide (HfO2) thin films have the potential to enable high density, non-volatile memory that can further the advancement of compute in memory (CiM) architectures [1]. The metal-ferroelectric-metal (MFM) capacitor is such a device that is highly scalable and easily integrated …
us
(code pays fourni par la source)
2025
conference-paper
OpenAlex
Shan Zhi Deng, John A. Howe, Shawming Ma, Sadik Yasir Tauki et autres
In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor ($T_{\mathrm{R}}$) for$4 \mathrm{F}^{2}$string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of …
us, de, sg
(code pays fourni par la source)
2025
article
OpenAlex
Yi Nong Xiao, Shan Zhi Deng, Zhouhang Jiang, Yixin Qin et autres
In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal–ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) …
us, tw, sg
(code pays fourni par la source)
2025
article
OpenAlex
Qi Zheng, Yixin Qin, Suhwan Lim, Kijoon Kim et autres
The ferroelectric field-effect transistor (FeFET) has been extensively studied as a synaptic weight cell due to its ability to tune conductance states via partial polarization switching, along with its energy efficiency and scalability. However, a significant challenge arises from the need for …
us, kr
(code pays fourni par la source)
2025
article
OpenAlex
Yixin Qin, Saikat Chakraborty, Zijian Zhao, Shawming Ma et autres
In this work, we present a comprehensive experimental and modeling study to clarify the role of the ferroelectric (FE) layer in enhancing the memory window (MW) of FeFETs with gate-side charge injection. We separated the FE contributions to the MW into remnant …
us, kr, sg
(code pays fourni par la source)
2025
conference-paper
OpenAlex
Shawming Ma, Saikat Chakraborty, Yixin Qin, Zijian Zhao et autres
The conventional HfO2-based n-type ferroelectric field-effect transistors (nFeFETs) suffer from read-after-write delay (RAWD), caused by electron detrapping at the channel interface after positive write pulses. In this work, we propose a metal-insulator-ferro-insulator-silicon (MIFIS) nFeFET structure incorporating a SiNxcharge trapping layer between the …
us, kr
(code pays fourni par la source)
2025
conference-paper
OpenAlex
Yixin Qin, Saikat Chakraborty, Zijian Zhao, Shawming Ma et autres
This study investigates the retention behavior of gate-side injection ferroelectric FETs for vertical NAND applications. Experimental results demonstrate that thicker blocking oxide layers enhance the initial memory window but result in greater retention loss at elevated temperatures due to the higher depolarization …
us, kr
(code pays fourni par la source)
2025
conference-paper
OpenAlex
Lilian Neim, Hector Rubio Rivera, Matthew van Niekerk, Zijian Zhao et autres
We demonstrate a FeFET-driven microring modulator capable of toggling between memory states via applied pulse voltage, achieving stable hysteresis, resonance shifts, and high extinction ratio, highlighting its potential for low power and efficient non-volatile photonic memory applications.
us
(code pays fourni par la source)
2024
conference-paper
OpenAlex
Yixin Qin, Saikat Chakraborty, Zijian Zhao, Kijoon Kim et autres
In this work, we performed a comprehensive experimental and modeling study, clarifying the role of ferroelectric materials in boosting the memory window of FeFETs with gate-side charge injection for the first time. We separated the ferroelectric contributions to the memory window into …
us, kr, sg
(code pays fourni par la source)
2024
conference-paper
OpenAlex
Shan Deng, Yi Nong Xiao, Zhouhang Jiang, Yixin Qin et autres
In this work, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the …
us, de, tw, sg
(code pays fourni par la source)