Accès ouvert
2026
article
OpenAlex
Nasrin Estaji, Ismaeil Abdolhosseini Sarsari, Gergő Thiering, Ádám Gali
Boron nitride is a layered crystal whose properties depend on how its atomic sheets are stacked. Its negatively charged boron vacancy is a well-established magnetic defect that can be prepared and read out optically, but in the common hexagonal form it emits …
ir, hu
(code pays fourni par la source)
Accès ouvert
2026
preprint
OpenAlex
Eliza Cornell, Benjamin Pingault, Gergő Thiering, Neil Sinclair et autres
Optical readout is a fundamental tool in atomic state measurement, yet the fidelity of optical readout is frequently limited by imperfect photon collection. This can be mitigated when readout occurs on a cycling transition which continuously fluoresces under resonant excitation, thus increasing …
Accès ouvert
2026
article
OpenAlex
Ilia Chuprina, Gergő Thiering, Emilie Bourgeois, Anna Ermakova et autres
The investigation of optically active point defects in wide-bandgap semiconductors is driven by the development of solid-state quantum technologies. Such atom-like defects are used for the realization of quantum registers and quantum sensors. Reproducible engineering of even well-established defects with predictable properties …
de, hu, nl, be, us, cz
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Accès ouvert
2026
software-paper
OpenAlex
Balázs Tóth, Ádám Gali, Gergő Thiering
Trigonal solid-state defects are often subjects of spontaneous symmetry breaking driven by the E⊗e Jahn-Teller effect, reflecting strong electron-phonon coupling. These systems, particularly paramagnetic defect qubits in solids are central for quantum technology applications, where accurate knowledge of their fine-structure parameters – …
hu
(code pays fourni par la source)
Accès ouvert
2026
software-paper
OpenAlex
Balázs Tóth, Ádám Gali, Gergő Thiering
Trigonal solid-state defects are often subjects of spontaneous symmetry breaking driven by the E⊗e Jahn-Teller effect, reflecting strong electron-phonon coupling. These systems, particularly paramagnetic defect qubits in solids are central for quantum technology applications, where accurate knowledge of their fine-structure parameters – …
hu
(code pays fourni par la source)
Accès ouvert
2026
preprint
OpenAlex
Zoltan Santha, Gergő Thiering
Point defects in wide-band-gap semiconductors exhibit optical spectra strongly shaped by electron-phonon coupling, but direct first-principles calculation of the corresponding phonon sidebands is often limited by the coarse vibrational spectrum of the largest defect supercells accessible by ab-initio electronic structure codes. In …
Accès ouvert
2026
preprint
OpenAlex
Zoltan Santha, Gergő Thiering
Point defects in wide-band-gap semiconductors exhibit optical spectra strongly shaped by electron-phonon coupling, but direct first-principles calculation of the corresponding phonon sidebands is often limited by the coarse vibrational spectrum of the largest defect supercells accessible by ab-initio electronic structure codes. In …
hu
(code pays fourni par la source)
Accès ouvert
2026
software-paper
OpenAlex
Balázs Tóth, Ádám Gali, Gergő Thiering
Accès ouvert
2026
article
OpenAlex
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas et autres
ABSTRACT Point defects in silicon carbide (SiC), particularly the negatively‐charged silicon vacancy () in 4H‐SiC, are leading candidates for scalable quantum technologies due to their favorable spin–optical properties and compatibility with industrial semiconductor fabrication processes. Comprehensive knowledge of a defect's electronic structure …
de, no, se, jp, hu, lt
(code pays fourni par la source)
Accès ouvert
2026
preprint
OpenAlex
Nasrin Estaji, I. Abdolhosseini Sarsari, Gergő Thiering, Ádám Gali
Boron nitride is a layered crystal whose properties depend on how its atomic sheets are stacked. Its negatively charged boron vacancy is a well-established magnetic defect that can be prepared and read out optically, but in the common hexagonal form it emits …
ir, hu
(code pays fourni par la source)
Accès ouvert
2026
article
OpenAlex
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas et autres
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and compatibility with industrial semiconductor fabrication processes. Comprehensive knowledge of a defect's electronic structure is …
Accès ouvert
2026
preprint
OpenAlex
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas et autres
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and compatibility with industrial semiconductor fabrication processes. Comprehensive knowledge of a defect's electronic structure is …
de, no, jp, hu, lt
(code pays fourni par la source)