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Profil bibliographique

Gergő Thiering

Informations fournies par OpenAlex. Research Africa ne déduit ni nationalité, ni poste, ni coordonnées personnelles.

87Publications signalées
1982Citations signalées
2Affiliations récentes

Les institutions déclarées

Les domaines associés

Diamond and Carbon-based Materials ResearchHigh-pressure geophysics and materialsElectronic and Structural Properties of OxidesGraphene research and applicationsSemiconductor materials and devices

Les publications récentes

Accès ouvert 2026 article OpenAlex

Enhanced emission from boron-vacancy center in rhombohedral boron nitride

Nasrin Estaji, Ismaeil Abdolhosseini Sarsari, Gergő Thiering, Ádám Gali

Boron nitride is a layered crystal whose properties depend on how its atomic sheets are stacked. Its negatively charged boron vacancy is a well-established magnetic defect that can be prepared and read out optically, but in the common hexagonal form it emits …

ir, hu (code pays fourni par la source)

0 citations Communications Physics
Accès ouvert 2026 preprint OpenAlex

Increased cyclicity of atomic transitions via coherent interference of decay paths

Eliza Cornell, Benjamin Pingault, Gergő Thiering, Neil Sinclair et autres

Optical readout is a fundamental tool in atomic state measurement, yet the fidelity of optical readout is frequently limited by imperfect photon collection. This can be mitigated when readout occurs on a cycling transition which continuously fluoresces under resonant excitation, thus increasing …

0 citations arXiv (Cornell University)
Accès ouvert 2026 article OpenAlex

Photoelectric Imaging of the Optically Inactive Charge State of Silicon‐Vacancy Defects in Diamond

Ilia Chuprina, Gergő Thiering, Emilie Bourgeois, Anna Ermakova et autres

The investigation of optically active point defects in wide-bandgap semiconductors is driven by the development of solid-state quantum technologies. Such atom-like defects are used for the realization of quantum registers and quantum sensors. Reproducible engineering of even well-established defects with predictable properties …

de, hu, nl, be, us, cz (code pays fourni par la source)

0 citations Advanced Science
Accès ouvert 2026 software-paper OpenAlex

Jahn-Teller-dynamics: Python package to determine vibronic interaction demonstrated on molecules and trigonal defect qubits

Balázs Tóth, Ádám Gali, Gergő Thiering

Trigonal solid-state defects are often subjects of spontaneous symmetry breaking driven by the E⊗e Jahn-Teller effect, reflecting strong electron-phonon coupling. These systems, particularly paramagnetic defect qubits in solids are central for quantum technology applications, where accurate knowledge of their fine-structure parameters – …

hu (code pays fourni par la source)

0 citations Mendeley Data
Accès ouvert 2026 software-paper OpenAlex

Jahn-Teller-dynamics: Python package to determine vibronic interaction demonstrated on molecules and trigonal defect qubits

Balázs Tóth, Ádám Gali, Gergő Thiering

Trigonal solid-state defects are often subjects of spontaneous symmetry breaking driven by the E⊗e Jahn-Teller effect, reflecting strong electron-phonon coupling. These systems, particularly paramagnetic defect qubits in solids are central for quantum technology applications, where accurate knowledge of their fine-structure parameters – …

hu (code pays fourni par la source)

0 citations Mendeley Data
Accès ouvert 2026 preprint OpenAlex

First-principles calculation of electron-phonon spectral functions for defects using phonon interpolation

Zoltan Santha, Gergő Thiering

Point defects in wide-band-gap semiconductors exhibit optical spectra strongly shaped by electron-phonon coupling, but direct first-principles calculation of the corresponding phonon sidebands is often limited by the coarse vibrational spectrum of the largest defect supercells accessible by ab-initio electronic structure codes. In …

0 citations arXiv (Cornell University)
Accès ouvert 2026 preprint OpenAlex

First-principles calculation of electron-phonon spectral functions for defects using phonon interpolation

Zoltan Santha, Gergő Thiering

Point defects in wide-band-gap semiconductors exhibit optical spectra strongly shaped by electron-phonon coupling, but direct first-principles calculation of the corresponding phonon sidebands is often limited by the coarse vibrational spectrum of the largest defect supercells accessible by ab-initio electronic structure codes. In …

hu (code pays fourni par la source)

0 citations arXiv (Cornell University)
Accès ouvert 2026 article OpenAlex

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas et autres

ABSTRACT Point defects in silicon carbide (SiC), particularly the negatively‐charged silicon vacancy () in 4H‐SiC, are leading candidates for scalable quantum technologies due to their favorable spin–optical properties and compatibility with industrial semiconductor fabrication processes. Comprehensive knowledge of a defect's electronic structure …

de, no, se, jp, hu, lt (code pays fourni par la source)

0 citations Advanced Functional Materials
Accès ouvert 2026 preprint OpenAlex

Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride

Nasrin Estaji, I. Abdolhosseini Sarsari, Gergő Thiering, Ádám Gali

Boron nitride is a layered crystal whose properties depend on how its atomic sheets are stacked. Its negatively charged boron vacancy is a well-established magnetic defect that can be prepared and read out optically, but in the common hexagonal form it emits …

ir, hu (code pays fourni par la source)

0 citations arXiv (Cornell University)
Accès ouvert 2026 article OpenAlex

Unraveling the electronic structure of silicon vacancy centers in 4H-SiC

Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas et autres

Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and compatibility with industrial semiconductor fabrication processes. Comprehensive knowledge of a defect's electronic structure is …

0 citations MPG.PuRe (Max Planck Society)
Accès ouvert 2026 preprint OpenAlex

Unraveling the electronic structure of silicon vacancy centers in 4H-SiC

Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas et autres

Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and compatibility with industrial semiconductor fabrication processes. Comprehensive knowledge of a defect's electronic structure is …

de, no, jp, hu, lt (code pays fourni par la source)

0 citations arXiv (Cornell University)

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