Anthony Vacca

Emphysema at Baseline Low-Dose CT Lung Cancer Screening Predicts Death from Chronic Obstructive Pulmonary Disease and Cardiovascular Disease Up to 25 Years Later

Jessica González, Rowena Yip, Javier J. Zulueta, Samuel M. Aguayo et autres

Emphysema identified at baseline low-dose CT in a lung cancer screening program was predictive of all-cause, chronic obstructive pulmonary disease, and cardiovascular disease mortality 25 years later in 9047 asymptomatic adults with a smoking history.

es, us (code pays fourni par la source)

Radiologic Features of Nodules Attached to the Mediastinal or Diaphragmatic Pleura at Low-Dose CT for Lung Cancer Screening

Yeqing Zhu, Rowena Yip, J. Zhang, Qiang Cai et autres

Background Pulmonary noncalcified nodules (NCNs) attached to the fissural or costal pleura with smooth margins and triangular or lentiform, oval, or semicircular (LOS) shapes at low-dose CT are recommended for annual follow-up instead of immediate workup. Purpose To determine whether management of …

cn, us, es, il, in, ch, jp, ca, it (code pays fourni par la source)

A 20-year Follow-up of the International Early Lung Cancer Action Program (I-ELCAP)

Rowena Yip, Dorith Shaham, Steven Markowitz, José Cervera Deval et autres

Background The low-dose CT (≤3 mGy) screening report of 1000 Early Lung Cancer Action Program (ELCAP) participants in 1999 led to the International ELCAP (I-ELCAP) collaboration, which enrolled 31 567 participants in annual low-dose CT screening between 1992 and 2005. In 2006, …

us, il, es, ch (code pays fourni par la source)

Prospective Cohort Study to Compare Long-Term Lung Cancer-Specific and All-Cause Survival of Clinical Early Stage (T1a–b; ≤20 mm) NSCLC Treated by Stereotactic Body Radiation Therapy and Surgery

Claudia I. Henschke, Rowena Yip, Qi Sun, Pengfei Li et autres

us, cn (code pays fourni par la source)

Improving reticle defect disposition via fully automated lithography simulation

Raunak Mann, Eliot Goodman, Keith Lao, Steven Ha et autres

Most advanced wafer fabs have embraced complex pattern decoration, which creates numerous challenges during in-fab reticle qualification. These optical proximity correction (OPC) techniques create assist features that tend to be very close in size and shape to the main patterns as seen …

Automatic classification and defect verification based on inspection technology with lithography simulation

Masaya Kato, Hideki Inuzuka, Takeshi Kosuge, Shingo Yoshikawa et autres

Even small defects on the main patterns can create killer defects on the wafer, whereas the same defect on or near the decorative patterns may be completely benign to the wafer functionality. This ambiguity often causes operators and engineers to put a …

jp (code pays fourni par la source)

Increasing reticle inspection efficiency and reducing wafer printchecks at 14nm using automated defect classification and simulation

Shazad Paracha, Eliot Goodman, Benjamin G. Eynon, Ben F. Noyes et autres

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the “requal” phase for extended, …

us (code pays fourni par la source)

Improved reticle requalification accuracy and efficiency via simulation-powered automated defect classification

Shazad Paracha, Benjamin G. Eynon, Ben F. Noyes, Anthony Nhiev et autres

Advanced IC fabs must inspect critical reticles on a frequent basis to ensure high wafer yields. These necessary requalification inspections have traditionally carried high risk and expense. Manually reviewing sometimes hundreds of potentially yield-limiting detections is a very high-risk activity due to …

us (code pays fourni par la source)

Increasing reticle inspection efficiency and reducing wafer print-checks using automated defect classification and simulation

Sung Jae Ryu, Sung Taek Lim, Anthony Vacca, Peter Fiekowsky et autres

IC fabs inspect critical masks on a regular basis to ensure high wafer yields. These requalification inspections are costly for many reasons including the capital equipment, system maintenance, and labor costs. In addition, masks typically remain in the “requal” phase for extended, …

kr (code pays fourni par la source)

Bridging the gaps between mask inspection/review systems and actual wafer printability using computational metrology and inspection (CMI) technologies

Linyong Pang, Vikram Tolani, Masaki Satake, Peter Hu et autres

Computational techniques have become increasingly important to improve resolution of optical lithography. Advanced computational lithography technologies, such as inverse lithography (ILT) and source mask optimization (SMO), are needed to print the most challenging layers, such as contact and metal, at the 20nm …

Model based short range mask process correction

G. Chen, J.-S. Wang, S. Bai, Rafael C. Howell et autres

The minimum feature size of integrated circuit continues to shrink. At 32 nm and smaller nodes, mask linearity errors caused by short range proximity effects less than around 3um during the manufacturing of photomasks become more significant in the overall lithography error …

Model-based mask verification on critical 45nm logic masks

Frank Sundermann, Franck Foussadier, T. Takigawa, Jim Wiley et autres

In the continuous battle to improve critical dimension (CD) uniformity, especially for 45-nanometer (nm) logic advanced products, one important recent advance is the ability to accurately predict the mask CD uniformity contribution to the overall global wafer CD error budget. In most …

ch, fr, jp (code pays fourni par la source)