H.F.W. Dekkers

Interplay of annealing temperature and Ga-Zn-O template thickness in the crystallographic properties of in-Ga-Zn-O thin films

Marta Agati, H.F.W. Dekkers, Pradyumna Kumar Parida, Olivier Richard et autres

We report on the synthesis and characterization of spinel In-Ga-Zn-O (IGZO) thin films, having application as channel of thin-film transistors (TFTs). To obtain the spinel IGZO phase, the deposition of the IGZO was carried out on a spinel Ga-Zn-O (GZO) layer, followed …

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Finite Element Framework for Electrostatics and Optical Simulations in IGZO TFTs-Part 2: Application

Pietro Rinaudo, Adrian Chasin, B. Kaczer, Ying Zhao et autres

We present a finite-element-based 1-D formalism to solve the Poisson equation for a thin-film transistor with a floating body. We apply our framework to InGaZnO (IGZO)-based devices, taking into account its subgap density of states (DoS), revealing its impact on device electrostatics, …

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Finite Element Framework for Electrostatics and Optical Simulations in IGZO TFTs-Part 2: Application

Pietro Rinaudo, Adrian Chasin, B. Kaczer, Ying Zhao et autres

We present a finite-element-based 1-D formalism to solve the Poisson equation for a thin-film transistor with a floating body. We apply our framework to InGaZnO (IGZO)-based devices, taking into account its subgap density of states (DoS), revealing its impact on device electrostatics, …

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Deposition and characterization of spinel indium zinc oxide thin films

Evangelos Agiannis, H.F.W. Dekkers, Marta Agati, Ankit Nalin Mehta et autres

Hard Mask Strategies in Nanoscale Patterning of Mg-Based Oxide Semiconductors: Implications for Advanced Device Architectures

Leila Ghorbani, Akeed A. Pavel, H.F.W. Dekkers, Stefan De Gendt et autres

Achieving high-fidelity feature transfer of compositionally complex Mg-based oxide semiconductors like magnesium zinc oxide (MgZnO) requires not only precise control of MgZnO etching but also optimized hard mask (HM) engineering. The integrity of the HM is highly dependent on both the material …

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Deposition of spinel IGZO thin films with increased indium contents on textured GZO templates

Evangelos Agiannis, H.F.W. Dekkers, Marta Agati, Annelies Delabie

Spinel indium gallium zinc oxide (IGZO) has been identified as an interesting alternative to amorphous IGZO (a-IGZO) due to its higher resilience to the formation of oxygen deficiencies. Currently, it is not understood whether the indium content in spinel IGZO can increase …

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Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

Hongwei Tang, Attilio Belmonte, Dennis Lin, Ying Zhao et autres

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in thin-film transistors with an amorphous indium-gallium-zinc-oxide (IGZO) …

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Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

Hongwei Tang, Attilio Belmonte, Dennis Lin, Ying(Candice) Zhao et autres

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in thin-film transistors with an amorphous indium-gallium-zinc-oxide (IGZO) …

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Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

Hongwei Tang, Attilio Belmonte, Dennis Lin, Ying(Candice) Zhao et autres

While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in thin-film transistors with an amorphous indium-gallium-zinc-oxide (IGZO) …

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In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI

Anastasiia Kruv, Michiel J. van Setten, Adrian Chasin, Daisuke Matsubayashi et autres

Integrating In–Ga–Zn oxide (IGZO) channel transistors into silicon-based ecosystems requires the resilience of the channel material to hydrogen. Standard In-rich IGZO (In = 40 metal at. %) suffers from degradation under forming gas anneal (FGA) and hydrogen-driven positive bias temperature instability (PBTI). …

Spinel IGZO deposition on optimized GZO templates

H.F.W. Dekkers, Masoud Dialameh, Marta Agati, Michiel J. van Setten et autres

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Unraveling BTI in IGZO Devices: Impact of Device Architecture, Channel Film Deposition Method and Stoichiometry/Phase, and Device Operating Conditions

Adrian Chasin, J. Franco, S. Van Beek, H.F.W. Dekkers et autres

We study the impact of the device architecture, channel deposition method, stoichiometry and phase, and AC stress on the BTI of IGZO thinfilm transistors fabricated on 300-mm wafers. Two main conclusions are obtained. First, reliability of IGZO based devices is strongly architecture …

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