Analysis of Heat Diffusion in GaN/3C-SiC/Diamond HEMTs for Design Optimization

Le résumé fourni par la source

This study presents a comprehensive thermal analysis of GaN/3C-SiC/diamond high-electron-mobility transistors (HEMTs), focusing on optimizing heat dissipation through a novel integration of nanosecond transient thermoreflectance (ns-TTR) and Raman thermography. By applying these techniques to fully fabricated devices, we directly measured layer-specific thermal conductivities and boundary resistances using the preexisting gate electrode as the transducer, enabling in situ characterization of thermal properties. Finite element simulations, using ns-TTR-measured parameters and validated by experimental temperature profiles, revealed an optimal thickness-dependent trade-off range in GaN thermal conductivity. These insights provide a framework for designing high-power-density HEMTs with balanced thermal and structural performance, emphasizing the need to optimize GaN thickness and transition layer (TL) properties for efficient heat management.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.