Analysis of Heat Diffusion in GaN/3C-SiC/Diamond HEMTs for Design Optimization
Xiang Zheng, James W. Pomeroy, Pharyanshu Kachhawa, J. Liang et autres
This study presents a comprehensive thermal analysis of GaN/3C-SiC/diamond high-electron-mobility transistors (HEMTs), focusing on optimizing heat dissipation through a novel integration of nanosecond transient thermoreflectance (ns-TTR) and Raman thermography. By applying these techniques to fully fabricated devices, we directly measured layer-specific thermal …
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IEEE Transactions on Electron Devices