In-sensor image memorization, low-level processing, and high-level computing by using above-bandgap photovoltages
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Le résumé fourni par la source
In-sensor computing holds great promise for ultrafast and energy-efficient machine vision. However, the development of a versatile in-sensor computing system that can integrate image memorization, low-level processing, and high-level computing functions remains a challenge, primarily due to the scarcity of photosensors that can offer both dynamic photoresponse and programmable photoresponsivity. Here, we successfully integrate these multi-functions into a ferroelectric photosensor-based array. The key enabler is the ferroelectric photosensor operating via the bulk photovoltaic effect, which exhibits above-bandgap, dynamically responding, and electrically switchable photovoltages. By using the dynamic photovoltage response, the array is capable of memorizing and pre-processing images, with the ability to adjust the memory and pre-processing effects by ferroelectric polarization. On the other hand, the electrically switchable photovoltages, featuring multi-level switchability and retrievability, enable the array to perform in-sensor high-level computing, achieving 100% accuracy in a 4-class image recognition task (noise level ≤ 10%). Notably, the high precision and reliability of photovoltage-based image memorization and processing greatly benefit from the high photovoltage produced by the ferroelectric photosensor - a distinct advantage for this application. This study lays the foundation for developing versatile in-sensor computing systems that could be utilized across a wide range of machine vision scenarios.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- In-sensor image memorization, low-level processing, and high-level computing by using above-bandgap photovoltages
- Date Crossref
- 12/12/2025
- Éditeur
- Springer Science and Business Media LLC
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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South China Normal University Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology pays non établi dans la noticeUniversité ou école supérieure
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Collaborative Innovation Center of Advanced Microstructures pays non établi dans la noticeStructure de recherche
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Nanjing University Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures pays non établi dans la noticeUniversité ou école supérieure
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology — South China Normal University, Collaborative Innovation Center of Advanced Microstructures et Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures — Nanjing University.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.