A Novel SiC Trench MOSFET with Integrated Junction Barrier Schottky for Improved Performances

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In this paper, a novel SiC MOSFET with an integrated Junction Barrier Schottky diode (JBS) on the surface (named JBS-MOS) is proposed, which enhances the reverse conduction capability and reduces the switching losses, offering superior performances in power converter applications. Simulation results show that the specific on-resistance$({R}_{\text{on}, \text{sp}})$and breakdown voltage (BV) of the JBS-MOS are${1. 9 0 m \Omega \cdot c m ^{2}}$and 1604 V, respectively. Meanwhile, JBS-MOS achieves a reverse onstate voltage$(V_{\mathrm{R}\_ \text{on }} {@} J_{\text{DS }}=-300 \mathrm{A} / \text{cm}^{2})$of 1.91 V, reduced by 1.59 V compared to Conventional MOSFET (C-MOS). Additionally, its reverse recovery charge$(Q_{\text{rr}})$is reduced by 78.7% at 450 K, resulting in a 53.7% reduction in turn-on loss at 450 K, indicating improved switching efficiency. These simulation results indicate that the JBS-MOS has potential for high-power and hightemperature applications.

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