Characterization of FOWLP Process Using Temporary Bonding Materials on Carrier with Very Low Die Shift

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This study aims to link several epoxy mold compound (EMC) material properties to warpage and die-shift that are typically present in a fanout wafer level packaging process flow with RDL last process conditions. Two EMC compounds with different CTE, Tg, and modulus are evaluated and compared for warpage and die-shift performance on a next generation temporary bonding material (TBM). A low CTE and high$\text{T}_{\mathrm{g}}$seem to be very beneficial to achieve low warpage on blanket mold on TBM wafers. When dies are embedded, the modulus plays a major role in order to mitigate thermal stresses that occur due to the Si-mold CTE mismatch during molding.

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