Thin 3D: an Innovative Approach to Ultra-Thin Wafer-Level Active Device Transfer Technology With Optimized Material and Thermal Solution for 3D Ic

Le résumé fourni par la source

To enable high-density integration, advanced 3D stacking technology implements backside wafer thinning, reducing wafer thickness to$10 \mu \mathrm{m}$. However, this approach imposes constraints on signal routing and via density in bonded structures. This work proposes a novel ultra-thin wafer-level active device transfer process for 3D ICs, achieving sub-1$\mu \mathrm{m}$interlayer thickness with high alignment accuracy. This method utilizes temporary bonding and wafer thinning. To address heat dissipation challenges in densely stacked structures, alternative materials such as$\text{AlN}, \text{Al}_{2} \mathrm{O}_{3}$, and$\text{Si}_{3} \mathrm{N}_{4}$are investigated. Bonding quality is evaluated through plasma activation and IR imaging, while COMSOL simulations were employed to assess thermal performance. AlN exhibited superior heat dissipation and bonding characteristics, supporting high-density integration and effective thermal management, advancing next-generation 3D IC architectures.

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